Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Feilchenfeld, N."'
Autor:
Engelmann, Sebastian U., Wise, Rich S., Feilchenfeld, N. B., Nummy, K., Barwicz, T., Gill, D., Kiewra, E., Leidy, R., Orcutt, J. S., Rosenberg, J., Stricker, A. D., Whiting, C., Ayala, J., Cucci, B., Dang, D., Doan, T., Ghosal, M., Khater, M., McLean, K., Porth, B., Sowinski, Z., Willets, C., Xiong, C., Yu, C., Yum, S., Giewont, K., Green, W. M. J.
Publikováno v:
Proceedings of SPIE; April 2017, Vol. 10149 Issue: 1 p101490D-101490D-9, 913420p
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p215-218, 4p
Autor:
Minixhofer, R., Feilchenfeld, N., Knaipp, M., Ro?hrer, G., Park, J.M., Zierak, M., Enichlmair, H., Levy, M., Loeffler, B., Hershberger, D., Unterleitner, F., Gautsch, M., Chatty, K., Shi, Y., Posch, W., Seebacher, E., Schrems, M., Dunn, J., Harame, D.
Publikováno v:
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2010, p75-78, 4p
Autor:
He, Z.X., Daley, D., Bolam, R., Vanslette, D., Chen, F., Cooney, E., Mosher, D., Feilchenfeld, N., Newton, K., Eshun, E., Rassel, R., Benoit, J., Coolbaugh, D., St. Onge, S., Dunn, J.
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2008, p212-215, 4p
Autor:
Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A.
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2008, p97-100, 4p
Autor:
Voldman, S., Gebreselasic, E., Zierak, M., Hershberger, D., Collins, D., Feilchenfeld, N., St. Onge, S., Dunn, J.
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p129-136, 8p
Autor:
Voldman, S., Gebreselasic, E., Lanzerotti, L., Larsen, T., Feilchenfeld, N., St. Onge, S., Joseph, A., Dunn, J.
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p112-120, 9p
Publikováno v:
2004 Electrical Overstress/Electrostatic Discharge Symposium; 2004, p1-9, 9p
Autor:
Lanzerotti, L., Feilchenfeld, N., Coolbaugh, D., Slinkman, J., Gray, P., Sheridan, D., Higgins, J., Hodge, W., Gordon, M., Larsen, T., Gautsch, M., Lindgren, P., Murty, R., Rascoe, J., Watson, K., Stamper, T., Eshun, E., He, J., Downes, K., Rassel, R.
Publikováno v:
Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004; 2004, p237-240, 4p
Autor:
Feilchenfeld, N., Lanzerotti, L., Sheridan, D., Wuthrich, R., Geiss, P., Coolbaugh, D., Gray, P., He, J., Demag, P., Greco, J., Larsen, T., Patel, V., Zierak, M., Hodge, W., Rascoe, J., Trappasso, J., Orner, B., Norris, A., Hershberger, D., Voegeli, B.
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting; 2002, p197-200, 4p