Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Fei-Bing Xiong"'
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 119901-119901-1 (2021)
Externí odkaz:
https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075027-075027-6 (2021)
Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization fie
Externí odkaz:
https://doaj.org/article/a8dbd48ca51941c1a48c7168d330946e
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong, Sam Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on
Externí odkaz:
https://doaj.org/article/7360e0efe40c4405b712f373bf9963ee
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. How
Externí odkaz:
https://doaj.org/article/b777a281e97645849db3cd8e05c1d57b
Autor:
Li-E. Cai, Chao-Zhi Xu, Hao-Xiang Lin, Jin-Jian Zheng, Zai-Jun Cheng, Fei-Bing Xiong, Peng-Peng Ren, Zhi-Chao Chen
Publikováno v:
physica status solidi (a). 219:2200316
Autor:
Fei-Bing Xiong, Yun-Shao Cho, Chia-Hsun Hsu, Shui-Yang Lien, Wen-Zhang Zhu, Sam Zhang, Xiao-Ying Zhang
Publikováno v:
Thin Solid Films. 660:797-801
Hafnium oxide (HfO2) thin films have received significant attention due to its excellent properties, such as large band gap, good thermodynamic stability, high density and high dielectric constant. The post-annealing temperature is also essential to
Autor:
Shui-Yang Lien, Chih-Hsiang Yang, X.G. Meng, Wen-Zhang Zhu, Xiao-Ying Zhang, Wei Huang, Songyan Chen, Chia-Hsun Hsu, Chung-Yuan Kung, Fei-Bing Xiong
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the
Autor:
Fei-Bing Xiong, Sam Zhang, Xiao-Ying Zhang, Shui-Yang Lien, Wen-Zhang Zhu, Chia-Hsun Hsu, Songyan Chen, Wei Huang, Wan-Yu Wu, Sin-Liang Ou
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the cryst
Publikováno v:
Optik. 127:243-245
We demonstrate a pulsed Nd:YAG laser Q-switched by a monolayer graphene. The monolayer graphene is fabricated by the chemical vapor deposition (CVD) method, and then transferred onto the facet of SiO2 to construct a saturable absorber (SA). The Q-swi
Autor:
Xiao-Ying, Zhang, Chia-Hsun, Hsu, Shui-Yang, Lien, Song-Yan, Chen, Wei, Huang, Chih-Hsiang, Yang, Chung-Yuan, Kung, Wen-Zhang, Zhu, Fei-Bing, Xiong, Xian-Guo, Meng
Publikováno v:
Nanoscale Research Letters
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the