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pro vyhledávání: '"Fei, Richun"'
Autor:
Fei, Richun
Le test de production des imageurs CMOS est une étape clé du flot de fabrication afin de garantir des produits répondant aux critères de qualité et exempts de défauts de fabrication. Ces tests sont classifiés en test électrique et test optiqu
Externí odkaz:
http://www.theses.fr/2015GREAT117
Autor:
Fei, Richun
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2015. English. ⟨NNT : 2015GREAT117⟩
Current production testing of CMOS imager sensors is mainly based on capturing images and detecting failures by image processing with special algorithms. The fault coverage of this costly optical test is not sufficient given the quality requirements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::22901b430dafeafcaa057df950842291
https://tel.archives-ouvertes.fr/tel-03081290/document
https://tel.archives-ouvertes.fr/tel-03081290/document
Publikováno v:
5th International Workshop on Advances in Sensors and Interfaces (IWASI), Bari, Italy
5th International Workshop on Advances in Sensors and Interfaces (IWASI)
5th International Workshop on Advances in Sensors and Interfaces (IWASI), Jun 2013, Bari, Italy. pp.174-177, ⟨10.1109/IWASI.2013.6576068⟩
IWASI
5th International Workshop on Advances in Sensors and Interfaces (IWASI)
5th International Workshop on Advances in Sensors and Interfaces (IWASI), Jun 2013, Bari, Italy. pp.174-177, ⟨10.1109/IWASI.2013.6576068⟩
IWASI
ISBN : 978-1-4799-0039-8; International audience; Interconnection lines in the sensors of CMOS imagers are used for pixel bias, addressing and readout. Catastrophic faults in these lines can cause parts of the pixel matrix to operate incorrectly and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2f2557f5bacb4a8be769040172442c5
https://hal.archives-ouvertes.fr/hal-01017962
https://hal.archives-ouvertes.fr/hal-01017962
Publikováno v:
5th IEEE International Workshop on Advances in Sensors & Interfaces IWASI; 2013, p174-177, 4p
