Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Feenstra, Randall"'
Autor:
Feenstra, Randall M.
The manner in which probability amplitudes of paths sum up to form wave functions of orbital angular momentum eigenstates is described. Using a generalization of stationary-phase analysis, distributions are derived that provide a measure of how paths
Externí odkaz:
http://arxiv.org/abs/2308.02884
Autor:
Feenstra, Randall M.
The manner in which probability amplitudes of paths sum up to form wave functions of a harmonic oscillator, as well as other, simple 1-dimensional problems, is described. Using known, closed-form, path-based propagators for each problem, an integral
Externí odkaz:
http://arxiv.org/abs/2306.11155
Autor:
Feenstra, Randall M., Frazier, Grayson R., Pan, Yi, Fölsch, Stefan, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Robinson, Joshua A.
Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe$_2$ grown on epitaxial graphene on SiC. Curve fitting of the data is performed, in order to deduce band-edge energies. In addition to desc
Externí odkaz:
http://arxiv.org/abs/2011.14168
Autor:
Wright, John, Chang, Celesta, Waters, Dacen, Lüpke, Felix, Raymond, Lucy, Koscica, Rosalyn, Khalsa, Guru, Feenstra, Randall, Muller, David, Xing, Huili G., Jena, Debdeep
Publikováno v:
Phys. Rev. Materials 5, 024802 (2021)
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater tha
Externí odkaz:
http://arxiv.org/abs/2008.09596
Autor:
Subramanian, Shruti, Campbell, Quinn T., Moser, Simon, Kiemle, Jonas, Zimmermann, Philipp, Seifert, Paul, Sigger, Florian, Sharma, Deeksha, Al-Sadeg, Hala, Labella III, Michael, Waters, Dacen, Feenstra, Randall M., Koch, Roland J., Jozwiak, Chris, Bostwick, Aaron, Rotenberg, Eli, Dabo, Ismaila, Holleitner, Alexander, Beechem, Thomas E., Wurstbauer, Ursula, Robinson, Joshua A.
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially
Externí odkaz:
http://arxiv.org/abs/2006.14689
Autor:
Waters, Dacen, Nie, Yifan, Lüpke, Felix, Pan, Yi, Fölsch, Stefan, Lin, Yu-Chuan, Jariwala, Bhakti, Zhang, Kehao, Wang, Chong, Lv, Hongyan, Cho, Kyeongjae, Xiao, Di, Robinson, Joshua A., Feenstra, Randall M.
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the moir\'e patter
Externí odkaz:
http://arxiv.org/abs/2004.07851
Autor:
Li, Jun, Wang, Qingxiao, He, Guowei, Widom, Michael, Nemec, Lydia, Blum, Volker, Kim, Moon, Rinke, Patrick, Feenstra, Randall M.
Publikováno v:
Phys. Rev. Materials 3, 084006 (2019)
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with and without
Externí odkaz:
http://arxiv.org/abs/1905.04234
Autor:
Lüpke, Felix, Waters, Dacen, de la Barrera, Sergio C., Widom, Michael, Mandrus, David G., Yan, Jiaqiang, Feenstra, Randall M., Hunt, Benjamin M.
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducin
Externí odkaz:
http://arxiv.org/abs/1903.00493
Publikováno v:
Appl. Phys. Lett. 113, 031605 (2018)
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the
Externí odkaz:
http://arxiv.org/abs/1807.02539