Výsledky vyhledávání - "Feduniewicz-Zmuda A"

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Leveraging both faces of polar semiconductor wafers for functional devices

Autor: van Deurzen, Len, Kim, Eungkyun, Pieczulewski, Naomi, Zhang, Zexuan, Feduniewicz-Zmuda, Anna, Chlipala, Mikolaj, Siekacz, Marcin, Muller, David, Xing, Huili Grace, Jena, Debdeep, Turski, Henryk

Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wa

Externí odkaz: http://arxiv.org/abs/2404.03733

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Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Autor: Wolny, Paweł, Turski, Henryk, Muziol, Grzegorz, Sawicka, Marta, Smalc-Koziorowska, Julita, Moneta, Joanna, Feduniewicz-Żmuda, Anna, Grzanka, Szymon, Skierbiszewski, Czesław

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the

Externí odkaz: http://arxiv.org/abs/2206.10296

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Electrically pumped blue laser diodes with nanoporous bottom cladding

Autor: Sawicka, Marta, Muziol, Grzegorz, Fiuczek, Natalia, Hajdel, Mateusz, Siekacz, Marcin, Feduniewicz-Żmuda, Anna, Nowakowski-Szkudlarek, Krzesimir, Wolny, Paweł, Żak, Mikołaj, Turski, Henryk, Skierbiszewski, Czesław

We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentrati

Externí odkaz: http://arxiv.org/abs/2201.03939

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