Zobrazeno 1 - 10 of 226 pro vyhledávání: '"Feduniewicz-Zmuda A"'
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Report
Leveraging both faces of polar semiconductor wafers for functional devices
Autor: van Deurzen, Len, Kim, Eungkyun, Pieczulewski, Naomi, Zhang, Zexuan, Feduniewicz-Zmuda, Anna, Chlipala, Mikolaj, Siekacz, Marcin, Muller, David, Xing, Huili Grace, Jena, Debdeep, Turski, Henryk
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wa
Externí odkaz: http://arxiv.org/abs/2404.03733
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2
Report
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Autor: Wolny, Paweł, Turski, Henryk, Muziol, Grzegorz, Sawicka, Marta, Smalc-Koziorowska, Julita, Moneta, Joanna, Feduniewicz-Żmuda, Anna, Grzanka, Szymon, Skierbiszewski, Czesław
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the
Externí odkaz: http://arxiv.org/abs/2206.10296
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3
Report
Electrically pumped blue laser diodes with nanoporous bottom cladding
Autor: Sawicka, Marta, Muziol, Grzegorz, Fiuczek, Natalia, Hajdel, Mateusz, Siekacz, Marcin, Feduniewicz-Żmuda, Anna, Nowakowski-Szkudlarek, Krzesimir, Wolny, Paweł, Żak, Mikołaj, Turski, Henryk, Skierbiszewski, Czesław
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentrati
Externí odkaz: http://arxiv.org/abs/2201.03939
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4
Akademický článek
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8
Publisher Correction: Using both faces of polar semiconductor wafers for functional devices.
Autor: van Deurzen L; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA. lhv9@cornell.edu., Kim E; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA., Pieczulewski N; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA., Zhang Z; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA., Feduniewicz-Zmuda A; Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Warsaw, Poland., Chlipala M; Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Warsaw, Poland., Siekacz M; Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Warsaw, Poland., Muller D; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA., Xing HG; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA., Jena D; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA., Turski H; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.; Institute of High Pressure Physics 'Unipress', Polish Academy of Sciences, Warsaw, Poland.
Publikováno v: Nature [Nature] 2024 Nov; Vol. 635 (8037), pp. E3.
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