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Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir-Blodgett Method.

Autor: Svit KA; Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia., Zarubanov AA; Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia., Duda TA; Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia., Trubina SV; Nikolaev Institute of Inorganic Chemistry, Siberian Branch Russian Academy of Sciences, 3 Lavrentyev Ave., Novosibirsk, 630090, Russia., Zvereva VV; Nikolaev Institute of Inorganic Chemistry, Siberian Branch Russian Academy of Sciences, 3 Lavrentyev Ave., Novosibirsk, 630090, Russia., Fedosenko EV; Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia., Zhuravlev KS; Rzhanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 13 Lavrentieva Ave., Novosibirsk, 630090, Russia.

Publikováno v: Langmuir : the ACS journal of surfaces and colloids [Langmuir] 2021 May 11; Vol. 37 (18), pp. 5651-5658. Date of Electronic Publication: 2021 Apr 29.