Zobrazeno 1 - 10
of 191
pro vyhledávání: '"Fedorenko, A G"'
Autor:
Grapenko, Olga Yu, Vlasenko, Valery G., Kozakov, Alexey T., Nikolskii, Anatoliy V., Kubrin, Stanislav P., Kozinkin, Aleksander V., Gorokhovsky, Alexander V., Vikulova, Мaria А., Tretyachenko, Elena V., Morozova, Natalia O., Fedorenko, Aleksei G.
Publikováno v:
In Journal of Solid State Chemistry December 2024 340
Autor:
Shuvaeva, Victoria A., Mazarji, Mahmoud, Nevidomskaya, DinaG., Minkina, Tatiana M., Fedorenko, Aleksei G., Rajput, Vishnu D., Kirichkov, Mikhail V., Tsitsuashvili, Victoria S., Mandzhieva, Saglara S., Veligzhanin, Aleksei A., Svetogorov, Roman D., Khramov, Evgeniy V., Wong, Ming Hung
Publikováno v:
In Environmental Research 1 April 2024 246
Autor:
Fedorenko, Y. G.
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical str
Externí odkaz:
http://arxiv.org/abs/1709.01917
Autor:
Fedorenko, Y. G.
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion
Externí odkaz:
http://arxiv.org/abs/1701.07087
Publikováno v:
Journal of Physics: Conference Series; 2024, Vol. 2871 Issue 1, p1-15, 15p
We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower n
Externí odkaz:
http://arxiv.org/abs/1511.08421
By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky anal
Externí odkaz:
http://arxiv.org/abs/1506.03068
Autor:
Fedorenko, Yanina G.
The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogen
Externí odkaz:
http://arxiv.org/abs/1505.00808
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Fedorenko, Yanina G., Hughes, Mark A., Colaux, Julien L., Jeynes, C., Gwilliam, Russell M., Homewood, Kevin, Gholipour, B., Yao, J., Hewak, Daniel W., Lee, Tae-Hoon, Elliott, Stephen R., Curry, Richard J.
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the e
Externí odkaz:
http://arxiv.org/abs/1410.5677