Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Federica Gencarelli"'
Autor:
Yosuke Shimura, O. Richard, Benjamin Vincent, Marc Heyns, Roger Loo, Wilfried Vandervorst, Federica Gencarelli, Alain Moussa, Matty Caymax, D. Vanhaeren, Hugo Bender, Arul Kumar
Publikováno v:
Thin Solid Films. 590:163-169
In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge2H6. Although fur
Publikováno v:
Solid-State Electronics. 110:65-70
In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current–voltage and capacitance–voltage measurements. These s
Autor:
Alban Gassenq, Yosuke Shimura, Gunther Roelkens, André Vantomme, Federica Gencarelli, Wilfried Vandervorst, Matty Caymax, Roger Loo, Wei Wang
Publikováno v:
ECS Transactions. 64:677-687
Ge has been considered as a promising candidate for the active region in optical interconnect applications such as lasers and photodetectors, since its band gap corresponds to a wavelength with less loss in SiO2 waveguides. However, to increase the e
Autor:
Eddy Simoen, Yosuke Shimura, Roger Loo, Andreas M. Holm, Filip Tuomisto, Federica Gencarelli, Simo Kilpeläinen, Jonatan Slotte, Jiri Kujala, Natalie Segercrantz, Katja Kuitunen
Publikováno v:
ECS Transactions. 64:241-253
In this work we present results obtained by positron annihilation spectroscopy (PAS) on point defects in group IV semiconductors in the positron group at Aalto University. PAS is a versatile tool for studying open volume and interface defects in soli
Autor:
Yosuke Shimura, Laurent Cerutti, Chen Hu, Roel Baets, Jean-Baptiste Rodriguez, Muhammad Muneeb, Joris Van Campenhout, Eric Tournié, Milos Nedeljkovic, Noel Healy, Sarah Uvin, Dorian Sanchez, Eva Ryckeboer, Ruijun Wang, Federica Gencarelli, Xiaoping Liu, Anna C. Peacock, Gunther Roelkens, Zeger Hens, Richard M. Osgood, Li Shen, François Leo, Utsav D. Dave, Nannicha Hattasan, Roger Loo, Alban Gassenq, Aditya Malik, Goran Z. Mashanovich, William M. J. Green, Benjamin Vincent, Bart Kuyken, Xia Chen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 2014, 20 (4), pp.394-404. ⟨10.1109/JSTQE.2013.2294460⟩
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 2014, 20 (4), pp.394-404. ⟨10.1109/JSTQE.2013.2294460⟩
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integ
Autor:
H. P. Lenka, Benjamin Vincent, Wilfried Vandervorst, Ajay Kumar Kambham, Federica Gencarelli, Arul Kumar, Manu P. Komalan, Matthieu Gilbert
Publikováno v:
Ultramicroscopy. 132:171-178
Ge (1− x ) Sn ( x ) is receiving a growing interest in the scientific community, as it has important applications in opto-electronic devices, ( as stressor) Source/Drain materials for Ge and SiGe MOSFETS. It is predicted that at 10% Sn concentratio
Autor:
Somya Gupta, Roger Loo, Clement Merckling, Eddy Simoen, Benjamin Vincent, Henk Vrielinck, Federica Gencarelli, Marc Heyns
Publikováno v:
ECS Transactions. 53:251-258
Deep levels associated with extended and point defects in MOS capacitors fabricated on unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep Level Transient Spectroscopy (DLTS). A 9nm layer of Al2O3 is deposited
Autor:
Eddy Simoen, Federica Gencarelli, Lung-Ku Chu, Clement Merckling, Roger Loo, Benjamin Vincent
Publikováno v:
ECS Transactions. 50:279-287
Deep levels present in MOS capacitors, fabricated on GeSn epitaxial layers on Ge-on-Si substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). The gate dielectric is composed of 9 nm Al2O3 deposited by Molecular Beam Epitaxy (MBE) o
Autor:
Alexis Franquet, Matty Caymax, Federica Gencarelli, Jelle Demeulemeester, Johan Meersschaut, Kristiaan Temst, Benjamin Vincent, Wilfried Vandervorst, Hugo Bender, André Vantomme, Alain Moussa, Marc Heyns, Roger Loo, Arul Kumar
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P134-P137
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter w
Autor:
Aaron Thean, Arul Kumar, Matty Caymax, Roger Loo, Wilfried Vandervorst, Liesbeth Witters, Benjamin Vincent, Geert Eneman, Marc Heyns, Federica Gencarelli, Clement Merckling
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N35-N40
Si CMOS technology is currently changing with the introduction of strain and new materials (Ge, III/V) to increase carrier mobility and devicesaturationcurrent.Recently,excellentGe-basedpMOSchannel performance has been demonstrated with intrinsic hol