Morphological and optical properties of aluminum nanoparticles deposited by thermal evaporation on heated substrates

Autor: Lachebi, Ines, Fedala, Abdelkrim, Djenizian, Thierry, Hadjersi, Toufik, Kechouane, Mohamed

Publikováno v: In Surface & Coatings Technology 15 June 2018 343:160-165

Silicon Germanium alloy (Si1-xGex) with x<7% as active layer in thin film transistors

Autor: Fedala, Abdelkrim, Coulon, Nathalie, Simon, Claude, Mohammed-Brahim, Tayeb

Publikováno v: Conference on Thin Film Transistors ITC 2015
Conference on Thin Film Transistors ITC 2015, Feb 2015, Rennes, France. pp.99-100

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::15ce4571ba19a46884d0e636b14f79ab
https://hal.science/hal-01121731

Amélioration des performances électriques des transistors en couches minces (TFTs) à base de l'alliage Si Ge

Autor: Fedala, Abdelkrim, Belarbi, Khaled, Kandoussi, Khalid, Cherfi, Rabah, Coulon, Nathalie, Simon, Claude, Mohammed-Brahim, Tayeb

Publikováno v: 9ème Congrès National de la physique et de ses applications
9ème Congrès National de la physique et de ses applications, Oct 2010, Ouargla, Algérie

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a12697540ae42d5bf308918d72f169a3
https://hal.science/hal-01121816

NanoSilicon based Electronics processed at very low temperature (T<180° C)

Autor: Coulon, Nathalie, Simon, Claude, Saboundji, Amar, Gorin, A., Kandoussi, Khalid, Pier, Tanguy, Belarbi, Khaled, Cherfi, Rabah, Fedala, Abdelkrim, Souleiman, Ismaïl, Mohammed-Brahim, Tayeb

Publikováno v: The second French Research Organizations Tohoku University Joint Workshop on Frontier Materials (FRONTIER-2009)
The second French Research Organizations Tohoku University Joint Workshop on Frontier Materials (FRONTIER-2009), Nov 2009, Sendai, Japan

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::65dfcd1a536850e144403723ca024e99
https://hal.science/hal-00525199

Effect of hydrogen and germanium concentrations on hydrogenated amorphous silicon germanium

Autor: Laidoudi, L., Rahal, A., Fedala, Abdelkrim, Kechouane, M., Mohammed-Brahim, Tayeb

Publikováno v: 23nd International Conference on Amorphous and Nanocrystalline Semiconductors
23nd International Conference on Amorphous and Nanocrystalline Semiconductors, Aug 2009, Utrecht, Netherlands

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3ccb997e949a42a63998a92fe8c9aa65
https://hal.archives-ouvertes.fr/hal-00398256