Zobrazeno 1 - 10
of 242
pro vyhledávání: '"Fearn, Sarah"'
Autor:
D'Anna, Nicolò, Bragg, Jamie, Skoropata, Elizabeth, Hernández, Nazareth Ortiz, McConnell, Aidan G., Clémence, Maël, Ueda, Hiroki, Constantinou, Procopios C., Spruce, Kieran, Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Sanchez, Dario Ferreira, Grolimund, Daniel, Staub, Urs, Matmon, Guy, Gerber, Simon, Aeppli, Gabriel
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consi
Externí odkaz:
http://arxiv.org/abs/2410.00241
Autor:
Constantinou, Procopios, Stock, Taylor J. Z., Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J., Strocov, Vladimir N., Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.
Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknes
Externí odkaz:
http://arxiv.org/abs/2309.17413
Autor:
D'Anna, Nicolò, Sanchez, Dario Ferreira, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel
Publikováno v:
Adv. Electron. Mater. 2023, 2201212
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsen
Externí odkaz:
http://arxiv.org/abs/2208.09379
Autor:
Heiba, Hany Fathy, Bullen, Jay C., Kafizas, Andreas, Petit, Camille, Fearn, Sarah, Skinner, Stephen J., Weiss, Dominik J.
Publikováno v:
In Colloids and Surfaces A: Physicochemical and Engineering Aspects 5 December 2024 702 Part 1
Autor:
Šimėnas, Mantas, O'Sullivan, James, Kennedy, Oscar W., Lin, Sen, Fearn, Sarah, Zollitsch, Christoph W., Dold, Gavin, Schmitt, Tobias, Schüffelgen, Peter, Liu, Ren-Bao, Morton, John J. L.
Impurity spins in crystal matrices are promising components in quantum technologies, particularly if they can maintain their spin properties when close to surfaces and material interfaces. Here, we investigate an attractive candidate for microwave-do
Externí odkaz:
http://arxiv.org/abs/2108.07654
Autor:
Risseeuw, Sara, Pilgrim, Matthew G., Bertazzo, Sergio, Brown, Connor N., Csincsik, Lajos, Fearn, Sarah, Thompson, Richard B., Bergen, Arthur A., ten Brink, Jacoline B., Kortvely, Elod, Spiering, Wilko, Ossewaarde–van Norel, Jeannette, van Leeuwen, Redmer, Lengyel, Imre
Publikováno v:
In Ophthalmology Science March-April 2024 4(2)
Akademický článek
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Autor:
Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S., Kölker, Alexander, McKenzie, David R., Schofield, Steven R., Curson, Neil J.
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scal
Externí odkaz:
http://arxiv.org/abs/1910.06685
Autor:
Avval, Tahereh G., Průša, Stanislav, Cushman, Cody V., Hodges, Grant T., Fearn, Sarah, Kim, Seong H., Čechal, Jan, Vaníčková, Elena, Bábík, Pavel, Šikola, Tomáš, Brongersma, Hidde H., Linford, Matthew R.
Publikováno v:
In Applied Surface Science 1 January 2023 607