Zobrazeno 1 - 10
of 202
pro vyhledávání: '"Fearn, M."'
Autor:
Gilbertson, A. M., Kormanyos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A., Cohen, L. F.
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme.
Externí odkaz:
http://arxiv.org/abs/1111.4806
Autor:
Gilbertson, A. M., Fearn, M., Kormányos, A., Read, D. E., Lambert, C. J., Emeny, M. T., Ashley, T., Solin, S. A., Cohen, L. F.
We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scatter
Externí odkaz:
http://arxiv.org/abs/1009.3823
Autor:
Gilbertson, A. M., Branford, W. R., Fearn, M., Buckle, L., Buckle, P. D., Ashley, T., Cohen, L. F.
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and 3.28x1015 m-2.
Externí odkaz:
http://arxiv.org/abs/0903.3427
The spin-orbit (SO) coupling parameters for lowest conduction subband due to structural (SIA) and bulk (BIA) inversion asymmetry are calculated for a range of carrier densities in [001]-grown delta-doped n-type InSb/In1-xAlxSb asymmetric quantum well
Externí odkaz:
http://arxiv.org/abs/0801.4849
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum
Externí odkaz:
http://arxiv.org/abs/0704.3897
Publikováno v:
Phys. Rev. B 76, 245328 (2007)
We propose a method of generating fully entangled electron spin pairs using an open static quantum dot and a moving quantum dot, realized by the propagation of a surface acoustic wave (SAW) along a quasi-one-dimensional channel in a semiconductor het
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702539
Publikováno v:
Phys. Rev. B 75, 085302 (2007).
We consider two interacting electrons in a semiconductor quantum dot structure which consists of a small dot within a larger dot, and demonstrate a singlet-triplet filtering mechanism which involves spin-dependent resonances and can generate entangle
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611207
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and two-qubit univ
Externí odkaz:
http://arxiv.org/abs/quant-ph/0206075
Publikováno v:
International Journal of COPD, Vol 2016, Iss default, Pp 327-334 (2016)
Colleen Doyle,1 David Dunt,2 David Ames,3 Marcia Fearn,3 Emily (Chuanmei) You,1 Sunil Bhar41Australian Catholic University, Melbourne, VIC, Australia; 2Centre for Health Policy, The University of Melbourne, Melbourne, VIC, Australia; 3National Ageing
Externí odkaz:
https://doaj.org/article/10d218b42eec48e69964f74cf5d2ff7a
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.