Zobrazeno 1 - 10
of 1 718
pro vyhledávání: '"Fdsoi"'
Autor:
Alfonso R. Cabrera-Galicia, Arun Ashok, Patrick Vliex, Andre Kruth, Andre Zambanini, Stefan van Waasen
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 5, Pp 377-386 (2024)
This paper presents the design and cryogenic electrical characterization of a voltage reference and a linear voltage regulator at temperatures between 6 K and 300 K. Both circuits are employed as test vehicles for the experimental performance evaluat
Externí odkaz:
https://doaj.org/article/4085bf467bef4d14842d3b9c6ceb5555
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 2, Pp 246-252 (2024)
Using the stacking technique in CMOS technology for Power Amplifiers (PAs), allows the use of a higher supply voltage. This facilitates achieving a higher voltage swing, and delivering more output power while maintaining a high efficiency. This work
Externí odkaz:
https://doaj.org/article/0cfc91fbcc48477191d7667348f4b36e
Publikováno v:
Micromachines, Vol 15, Iss 6, p 702 (2024)
The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT st
Externí odkaz:
https://doaj.org/article/1e8fbc1c88d14a6891d52af34f980eb9
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 14, Iss 2, p 22 (2024)
In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using a 28 nm Ultra-Thin Body and Box-Fully Depleted Silicon On Insulator (UTBB-FDSOI) technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors enables t
Externí odkaz:
https://doaj.org/article/a510b02b0e5e4c3395ef0f9adb75b793
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 619-623 (2023)
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K – 125 K
Externí odkaz:
https://doaj.org/article/5c159406494142bfaddbc87b45814b01
Publikováno v:
IEEE Access, Vol 11, Pp 56951-56957 (2023)
The paper presents a novel approach to the modeling of the back-gate dependence of the threshold voltage of Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs down to cryogenic temperatures by using slope factors with a gate coupling effect. The FDS
Externí odkaz:
https://doaj.org/article/1c32f00c06504b0780349ff14605852f
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 1, Pp 74-82 (2023)
In this article, we propose a nontraditional design of dynamic logic circuits using fully-depleted silicon-on-insulator (FDSOI) FETs. FDSOI FET allows the threshold voltage ( $V_{\text {t}}$ ) to be adjustable (i.e., low- $V_{\text {t}}$ and high- $V
Externí odkaz:
https://doaj.org/article/1f65d10a88e6444f8c5229fc53be357c
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 14, Iss 1, p 8 (2024)
Although Moore’s Law reaches its limits, it has never applied to analog and RF circuits. For example, due to the short channel effect (SCE), drain-induced barrier lowering (DIBL), and sub-threshold slope (SS)…, longer transistors are required to
Externí odkaz:
https://doaj.org/article/df62a7b675244961ac0ca48c014bc7a5
Autor:
Utess Dirk, Kleimaier Dominik Martin, Billan Etienne, Youssuf Tashfain, Zhao Zhixing, Nemec Thorgund, Meyer Moritz Andreas, Rinderknecht Jochen
Publikováno v:
BIO Web of Conferences, Vol 129, p 24030 (2024)
Externí odkaz:
https://doaj.org/article/512291b13888430e95d365b26a03eb7c