Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Fazhan Zhao"'
Publikováno v:
Applied Sciences, Vol 12, Iss 7, p 3649 (2022)
This paper presents a 19 ps precision and 170 M samples/s time-to-digital converter (TDC) in FPGA. Through the direct count method and tapped delay line method, the coarse count and fine count can be extracted, respectively. The direct count is reali
Externí odkaz:
https://doaj.org/article/5953dadb8cb84d71a8233a85cde50427
Publikováno v:
Sensors, Vol 22, Iss 1, p 284 (2021)
This paper presents a low jitter All-Digital Delay-Locked Loop (ADDLL) with fast lock time and process immunity. A coarse locking algorithm is proposed to prevent harmonic locking with just a small increase in hardware resources. In order to effectiv
Externí odkaz:
https://doaj.org/article/8433f0713aef408481fb4a22e496946a
Publikováno v:
IEEE Sensors Journal. 22:23806-23811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4251dd0eaaf97039b8927e84118a298b
https://doi.org/10.1109/jsen.2022.3218466
https://doi.org/10.1109/jsen.2022.3218466
Autor:
Yuexin Gao, Xiaowu Cai, Zhengsheng Han, Yun Tang, Liqiang Ding, Ruirui Xia, Mali Gao, Fazhan Zhao
Publikováno v:
Journal of Power Electronics. 23:779-788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cf9819bfbe7f354e919e77a5832595
https://doi.org/10.1007/s43236-022-00570-3
https://doi.org/10.1007/s43236-022-00570-3
Autor:
Yifan Li, Tao Ni, Juanjuan Wang, Linchun Gao, Xiaojing Li, Jiangjiang Li, Jianhui Bu, Duoli Li, Lida Xu, Runjian Wang, Chuanbin Zeng, Zhijie Wang, Bo Li, Fazhan Zhao, Jiajun Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:5430-5436
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcfe63125e5064b5e7725b01d4db188e
https://doi.org/10.1109/ted.2022.3201439
https://doi.org/10.1109/ted.2022.3201439
Publikováno v:
Analog Integrated Circuits and Signal Processing. 111:451-460
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61e94c990883fa4aae2ad7112c0cae8
https://doi.org/10.1007/s10470-022-02029-8
https://doi.org/10.1007/s10470-022-02029-8
Autor:
Lei Wang, X. Zhang, Xingji Li, Ningyang Liu, Yun Tang, Jiantou Gao, Xiaowu Cai, Bo Li, Jianqun Yang, H. Zhu, Fazhan Zhao
Publikováno v:
IEEE Transactions on Nuclear Science. 69:225-231
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3508fb24052731297a81fc600c4c8761
https://doi.org/10.1109/tns.2021.3128533
https://doi.org/10.1109/tns.2021.3128533
Autor:
Yang Huang, Zhengsheng Han, Fanyu Liu, Bo Li, Binhong Li, Jiantou Gao, Gang Zhang, Lei Wang, Duoli Li, Jian Jiao, Fazhan Zhao, Tianchun Ye
Publikováno v:
IEEE Transactions on Nuclear Science. 69:453-461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea998b5a5575420f0e7e71bd5b0c488
https://doi.org/10.1109/tns.2022.3145027
https://doi.org/10.1109/tns.2022.3145027
Publikováno v:
Electronics; Volume 11; Issue 23; Pages: 4022
FDSOI (Fully Depleted Silicon On Insulator) devices have a good performance in anti-single-event circuits. However, the bipolar amplification effect becomes a severe problem due to the buried oxide. The previous models for Single Event Transient (SET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::545053930b7ccb4beae47dfaa9a3f56a
Autor:
Jiantou Gao, X. Zhang, Shuangping Han, Yurong Bai, H. Zhu, Guodong Xiong, Rui Gu, Gang Guo, Zhengsheng Han, Bo Li, Xiaoting Shan, Fazhan Zhao, Chaohui He, Lei Wang, Xinyu Liu, Chengbing Qin, Jie Liu
Publikováno v:
ACS Photonics. 8:2912-2922
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ec62abb5b357a17ffc3d3561afebbf
https://doi.org/10.1021/acsphotonics.1c00364
https://doi.org/10.1021/acsphotonics.1c00364