Mechanisms of surface anodization produced by scanning probe microscopes.

Autor: Gordon, A. E., Fayfield, R. T., Litfin, D. D., Higman, T. K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 6, p2805-2808, 4p

Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal-insulator-semiconductor field-effect transistors.

Autor: Fayfield, R. T., Chen, J., Hagedorn, M. S., Higman, T. K., Moy, A. M., Cheng, K. Y.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 2, p786-788, 3p

Applications of spin dependent transport materials.

Autor: Daughton, J. M., Pohm, A. V., Fayfield, R. T., Smith, C. H.

Publikováno v: Journal of Physics D: Applied Physics; 11/21/1999, Vol. 32 Issue 22, p1-1, 1p