Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Fayfield, R. T."'
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 6, p2805-2808, 4p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 3, p862-864, 3p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 2, p786-788, 3p
Publikováno v:
Journal of Physics D: Applied Physics; 11/21/1999, Vol. 32 Issue 22, p1-1, 1p
Autor:
Higman, T. K., Fayfield, R. T., Hagedorn, M. S., Lee, K. H., Campbell, S. A., Baillargeon, J. N., Cheng, K. Y.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1993, Vol. 11 Issue 3, p992-993, 2p
Publikováno v:
Chinese Physics Letters; Oct2012, Vol. 29 Issue 10, p1-5, 5p
Publikováno v:
Journal of Physics: Condensed Matter; 6/ 7/2006, Vol. 18 Issue 22, p5155-5162, 8p
Autor:
Hui-Xin HW Wang, Yu-Cheng YW Wu, Li-De LZ Zhang, Guang-Hai GL Li, Jun-Xi JZ Zhang, Ming MW Wang, Zhi-Gang ZL Li
Publikováno v:
Journal of Physics D: Applied Physics; Nov2005, Vol. 38 Issue 21, p3841-3844, 4p
Autor:
Suman Kamboj, Deepak K Roy, Susmita Roy, Rajeswari Roy Chowdhury, Prabhat Mandal, Mukul Kabir, Goutam Sheet
Publikováno v:
Journal of Physics: Condensed Matter; 10/16/2019, Vol. 31 Issue 41, p1-1, 1p
Publikováno v:
Journal of Physics D: Applied Physics; 7/19/2017, Vol. 50 Issue 28, p1-1, 1p