Výsledky vyhledávání - "Fay, Aurelien"

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Electron-phonon coupling in suspended graphene: supercollisions by ripples

Autor: Laitinen, Antti, Oksanen, Mika, Fay, Aurélien, Cox, Daniel, Tomi, Matti, Virtanen, Pauli, Hakonen, Pertti

Publikováno v: Nano Lett. 14, 3009 (2014)

Using electrical transport experiments and shot noise thermometry, we find strong evidence that "supercollision" scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended graphene aro

Externí odkaz: http://arxiv.org/abs/1510.09176

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Wideband superconducting nanotube electrometer

Autor: Häkkinen, Pasi, Fay, Aurélien, Golubev, Dmitry, Lähteenmäki, Pasi, Hakonen, Pertti

Publikováno v: Applied Physics Letters 107, 012601 (2015)

We have investigated the microwave response of nanotube Josephson junctions at 600-900 MHz at microwave powers corresponding to currents from 0 to $2\times I_{\mathrm C}$ in the junction. Compared with theoretical modeling, the response of the juncti

Externí odkaz: http://arxiv.org/abs/1508.03825

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Existence of an Independent Phonon Bath in a Quantum Device

Autor: Pascal, Laetitia, Fay, Aurelien, Winkelmann, Clemens, Courtois, Hervé

Publikováno v: Physical Review B (Condensed Matter) 88 (2013) 100502(R)

At low temperatures, the thermal wavelength of acoustic phonons in a metallic thin film on a substrate can widely exceed the film thickness. It is thus generally believed that a mesoscopic device operating at low temperature does not carry an individ

Externí odkaz: http://arxiv.org/abs/1301.3612

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Energy relaxation in graphene and its measurement with supercurrent

Autor: Voutilainen, Juha, Fay, Aurelien, Häkkinen, Pasi, Viljas, Janne K., Heikkilä, Tero T., Hakonen, Pertti J.

We study inelastic energy relaxation in graphene for low energies to find out how electrons scatter with acoustic phonons and other electrons. By coupling the graphene to superconductors, we create a strong dependence of the measured signal, i.e.,\ c

Externí odkaz: http://arxiv.org/abs/1103.3234

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Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

Autor: Alles, Harry, Aarik, Jaan, Aidla, Aleks, Fay, Aurelien, Kozlova, Jekaterina, Niilisk, Ahti, Pärs, Martti, Rähn, Mihkel, Wiesner, Maciej, Hakonen, Pertti, Sammelselg, Väino

Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also in a two-st

Externí odkaz: http://arxiv.org/abs/1005.1469

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