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pro vyhledávání: '"Fattal, Imri"'
Autor:
Chen, Kuan-Chu, Godfrin, Clement, Simion, George, Fattal, Imri, Kubicek, Stefan, Beyne, Sofie, Raes, Bart, Loenders, Arne, Kao, Kuo-Hsing, Wan, Danny, De Greve, Kristiaan
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we analyzed
Externí odkaz:
http://arxiv.org/abs/2410.18546
