Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Fatimah K. A. Hamid"'
Autor:
Farah Afiqa Mohd Ghazali, Pei Ling Leow, Marwan Nafea, Fatimah K. A. Hamid, Mohamed Sultan Mohamed Ali, Noor Dzulaikha Daud, Tanveer Saleh
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 113:1727-1738
Micro-electrical discharge machining (μEDM) is an unconventional machining method that is suitable for machining of conductive materials including highly doped silicon (Si) wafers. This paper reports a novel method of heat-assisted μEDM machining o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4827a86355d06eb0024ca13c8df131fb
https://doi.org/10.1007/s00170-021-06734-y
https://doi.org/10.1007/s00170-021-06734-y
Centroid and Inversion Charge Model for Long Channel Strained-Silicon GAA MOSFET with Quantum Effect
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This paper presents a modelling approach for centroid and inversion charge of strained GAA MOSFET. Such analysis is essential to study the impact of the quantum effect on the device which involved with aggressive scaling of the radius of the channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b39f6c7163b42a7ef32b221812d643a
https://doi.org/10.1109/edtm47692.2020.9117842
https://doi.org/10.1109/edtm47692.2020.9117842
Autor:
Seyed Saeid Rahimian Koloor, Ali Hosseingholipourasl, Fatimah K. H. Hamid, Yasser D. Al-Otaibi, Michal Petrů, Elnaz Akbari, Sharifah H. S. Ariffin
Publikováno v:
Sensors, Vol 20, Iss 5, p 1506 (2020)
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 5
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 5
Over the past years, carbon-based materials and especially graphene, have always been known as one of the most famous and popular materials for sensing applications. Graphene poses outstanding electrical and physical properties that make it favorable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08ba7c65e39db3c19257e07af789bc60
https://www.mdpi.com/1424-8220/20/5/1506
https://www.mdpi.com/1424-8220/20/5/1506
Autor:
Muhammad Luqman Mohd Napi, Haryati Jamaluddin, Uda Hashim, Ahmad Fakhrurrazi Ahmad Noorden, Mohd Ridzuan Ahmad, Mohd Khairul Ahmad, Fatimah K. A. Hamid, Michael Loong Peng Tan, Suhana Mohamed Sultan
Publikováno v:
Journal of The Electrochemical Society. 167:137501
Morphology effect is one of the essential factors that influence the performance of electrochemical biosensors based on ZnO nanostructures. These nanostructures are characterized by anisotropic growth with different dimensionalities such as zero-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a13d3cb562df19b52e24f1fd1869bf
https://doi.org/10.1149/1945-7111/abb4f4
https://doi.org/10.1149/1945-7111/abb4f4
Autor:
Fatimah K. A. Hamid, Wei Sun Leong, Suhana Mohamed Sultan, Razali Ismail, N. Ezaila Alias, Zaharah Johari, Wei Hong Lim
Publikováno v:
Semiconductor Science and Technology. 35:025010
This paper presents a modeling approach for strained silicon surrounding gate MOSFETs. The main contribution of this work is the simplification of the charge model by using an explicit solution technique which includes the strained and quantum effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef1bd43b079d7e75a0537d1dd0762ea
https://doi.org/10.1088/1361-6641/ab5d90
https://doi.org/10.1088/1361-6641/ab5d90
Publikováno v:
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4a135fd2b09cfcdb1aeb10a47565c6f
https://doi.org/10.1109/rsm.2017.8069117
https://doi.org/10.1109/rsm.2017.8069117
Autor:
M.A. Razali, Fatimah K. A. Hamid
Publikováno v:
2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
Silicon co-implantation into PMOS FinFET fabrication is presented. The co-implantation method is applied at the source and drain to enhance transportation properties of the devices. The device is fabricated using an industry oriented tool, Sentaurus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74e3fb87343276e5bbc2a9ec8c5948dd
https://doi.org/10.1109/rsm.2017.8069143
https://doi.org/10.1109/rsm.2017.8069143
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 14:241
Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3aa4243b6b52f423e780b377506fc7
https://doi.org/10.11591/ijeecs.v14.i1.pp241-249
https://doi.org/10.11591/ijeecs.v14.i1.pp241-249
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 13:801
Due to the rapid scaling of Complementary Metal-Oxide-Semiconductor (CMOS), the structure of the planar MOSFET approaches the scaling limits when the short channel effects (SCEs) become the main problem. The Double-Gate and Gate-all-Around nanowire M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25630e0bb06f81032835167c25dba6e2
https://doi.org/10.11591/ijeecs.v13.i2.pp801-807
https://doi.org/10.11591/ijeecs.v13.i2.pp801-807
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 10:1305-1309
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2814d983a12425730e02a738cbadaa
https://doi.org/10.1166/jctn.2013.2847
https://doi.org/10.1166/jctn.2013.2847