Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Fatih Kocer"'
Autor:
I. Turan, Adnan Gundel, A. Karakuzulu, Oguz Kazan, Fatih Kocer, Ozlem Aydin Civi, Onur Memioglu
Publikováno v:
Advanced Electromagnetics, Vol 8, Iss 2, Pp 1-9 (2019)
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6740e9617b66590811d435c4dc106f1
https://aemjournal.org/index.php/AEM/article/view/1012
https://aemjournal.org/index.php/AEM/article/view/1012
Publikováno v:
IEEE Microwave and Wireless Components Letters. 29:385-387
A novel lumped-element topology is presented for a wideband 3-dB 90 degrees hybrid coupler where design and implementation are straightforward. In the design, only lumped LC elements are used, and the topology employs a simple widebanding technique.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2f867d17fd0c918e7d896b83f109b70
https://doi.org/10.1109/lmwc.2019.2911648
https://doi.org/10.1109/lmwc.2019.2911648
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 64:2380-2387
This paper presents a compact model for threshold self-compensated rectifiers that can be used to optimize circuit parameters early in the design phase instead of time-consuming transient simulations. A design procedure is presented for finding the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a789db8c544477c387815d22f3524315
https://doi.org/10.1109/tcsi.2017.2695650
https://doi.org/10.1109/tcsi.2017.2695650
Autor:
Fatih Kocer
Publikováno v:
Microelectronics Journal. 61:123-129
This paper presents a novel control circuit that eliminates signal overshoot inherent to digital step attenuators (DSA) during state transitions. With the addition of digital delay elements, transitions from attenuation state to insertion loss state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77eff01f74843c51e23f1ad7afb22b9b
https://doi.org/10.1016/j.mejo.2017.01.008
https://doi.org/10.1016/j.mejo.2017.01.008
Autor:
Fatih Kocer
Publikováno v:
Volume: 25, Issue: 4 3435-3442
Turkish Journal of Electrical Engineering and Computer Science
Turkish Journal of Electrical Engineering and Computer Science
This paper presents a novel RC-triggered, field-effect transistor (FET)-based power clamp that can be used in high-voltage complementary metal oxide semiconductor (CMOS) processes. A simple two-stage design provides a fast trigger while keeping the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e797764b0d1050bbe9e782caafb760b
https://doi.org/10.3906/elk-1610-49
https://doi.org/10.3906/elk-1610-49
Publikováno v:
IET Circuits, Devices & Systems. 10:504-513
This paper presents a new time-efficient modelling approach for UHF Dickson rectifiers. Due to the very low computation time, the approach can provide a quick and effective alternative to the standard transient simulations. The presented approach res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ec59b0c12b8b10cb1e3c6c9d514485
https://doi.org/10.1049/iet-cds.2015.0323
https://doi.org/10.1049/iet-cds.2015.0323
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:575-577
This letter presents a threshold-compensated UHF rectifier with a local self-calibrator in a 0.18- $\mu \text{m}$ CMOS process. The self-calibrator compensates the intrinsic- $V_{{\mathrm{th}}}$ voltage for a broad range of input power intensity to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a7ea435ec65405373fb14f5ac66942
https://doi.org/10.1109/lmwc.2017.2701326
https://doi.org/10.1109/lmwc.2017.2701326
Publikováno v:
2018 18th Mediterranean Microwave Symposium (MMS).
This paper presents an X-band single pole double throw (SPDT) switch build on a commercial 0.25 mu m Gallium Nitride (GaN) on silicon carbide (SiC) technology. Since the switch is designed to handle at least 25 W input power, special attention was gi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::210fbbad337e96c5ffdca79ab65936c9
https://doi.org/10.1109/mms.2018.8611933
https://doi.org/10.1109/mms.2018.8611933
Publikováno v:
2018 13th European Microwave Integrated Circuits Conference (EuMIC).
This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 $\mu$ m GaN on SiC technology. The selected GaN pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb1a0ed389c00cdb34fa8ad2799e8c42
https://doi.org/10.23919/eumic.2018.8539902
https://doi.org/10.23919/eumic.2018.8539902
Autor:
Fatih Kocer, Arash Ebrahimi Jarihani
Publikováno v:
2017 12th European Microwave Integrated Circuits Conference (EuMIC).
We present a novel digital step attenuator (DSA) with low phase variation under attenuation state and frequency changes. This is achieved while keeping all other specifications comparable with the state-of-the-art. To compensate the phase shift, a nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33ce376084b17b704cc18977aeaaad4e
https://doi.org/10.23919/eumic.2017.8230686
https://doi.org/10.23919/eumic.2017.8230686