Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Fatih Akyol"'
Autor:
Fatih Akyol, Zeynep Aslan
Publikováno v:
Journal of Tourism and Gastronomy Studies. 7:1933-1957
Autor:
Fatih Akyol, İlkay Demir
Publikováno v:
Materials Science in Semiconductor Processing. 146:106645
Autor:
FATIH AKYOL
Publikováno v:
Volume: 45, Issue: 3 169-177
Turkish Journal of Physics
Turkish Journal of Physics
Monoclinic gallium oxide (β−Ga2O3) has found great research interest in solar blind photodetector (SBP) applications due to its’ bandgap ∼4.85 eV and availability of high quality native crystal growth. Applications includ- ing missile guidance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::594a9291322f53f18c380f57885159d5
https://dergipark.org.tr/tr/pub/tbtkphysics/issue/63651/964112
https://dergipark.org.tr/tr/pub/tbtkphysics/issue/63651/964112
Autor:
Tijen Kaya-Temiz, Yusuf Cem Kaplan, Gözde Küçüksolak, Elif Keskin-Arslan, Sacit Nuri Gorgel, Fatih Akyol, Baris Karadas
Publikováno v:
Reproductive Toxicology. 76:103-108
Objective The 2014 report by European Medicines Agency (EMA) restricted the use of thiocolchicoside for all reproductive-age women. In this study, we aim to expand the systematically-collected human data and discuss it within the frame provided by th
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Shahadat H. Sohel, Towhidur Razzak, Siddharth Rajan, Fatih Akyol, Aaron R. Arehart, Yuewei Zhang, Wenyuan Sun, Vishank Talesara, Wu Lu, Sanyam Bajaj
Publikováno v:
IEEE Electron Device Letters. 39:256-259
We report on ultra-wide bandgap (UWBG) Al0.7Ga0.3N channel metal–oxide–semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor deposition. Employing reverse Al composition graded ohmic contact layers and 20 nm Al2O3
Autor:
Sanyam Bajaj, Pil Sung Park, David J. Meyer, Aimee L. Price, Zhichao Yang, Sriram Krishnamoorthy, Fatih Akyol, Yuewei Zhang, Siddharth Rajan
Publikováno v:
IEEE Transactions on Electron Devices. 64:3114-3119
We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency ( ${f}_{T}$ ) and maximum oscillation frequency
Autor:
Fatih Akyol
Publikováno v:
Journal of Applied Physics. 127:074501
With a wide bandgap of ∼4.85 eV, high chemical and thermal stability, and melt growth availability, β-Ga2O3 has been found in a large number of solar blind photodetector (SBP) applications including missile guidance, flame detection, water purific
Autor:
Zane Jamal-Eddine, Fatih Akyol, Jinwoo Hwang, Yuewei Zhang, Siddharth Rajan, Jared M. Johnson
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We report on the design, demonstration and current status of tunnel-injected ultra-violet light emitting diodes (UV LEDs). III-Nitride ultraviolet light emitting diodes (UV LEDs) are promising in various applications including sterilization, water pu
Autor:
David J. Meyer, Pil Sung Park, Shahadat H. Sohel, Sanyam Bajaj, Sriram Krishnamoorthy, Fatih Akyol, Yuewei Zhang, Zhichao Yang, Siddharth Rajan
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
We present small-signal measurements on graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency, f T , and power gain cutoff frequency, f max , profiles as a function of current dens
Autor:
Siddharth Rajan, Michael W. Moseley, Sriram Krishnamoorthy, Yuewei Zhang, Fatih Akyol, Andrew M. Armstrong, Andrew A. Allerman, Jinwoo Hwang, Jared M. Johnson
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a69fd48ffa4df5e371b483d96ca27430
http://arxiv.org/abs/1705.08414
http://arxiv.org/abs/1705.08414