Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Fatemeh Shahedipou-Sandvik"'
Autor:
Fatemeh Shahedipou-Sandvik, Randy P. Tompkins, Puneet Suvana, J. R. Smith, Michael A. Derenge, Jacob H. Leach, Robert Metzger, K.W. Kirchner, Mihir Tungare, Shuai Zhou, Kenneth A. Jones
Publikováno v:
ECS Transactions. 50:297-305
Point defects in the GaN cause premature breakdown in GaN Schottky diodes at least to the same extent as dislocations do. The most likely cause is impact ionization of deep acceptors. A primary deep acceptor in MOCVD-grown GaN is C. Another is a Ga v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6a83a0e52b37c110d9d373d0c1438f
https://doi.org/10.1149/05003.0297ecst
https://doi.org/10.1149/05003.0297ecst
Autor:
Kenneth A. Jones, Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Shuai Zhou, R. Metzger, Jacob Leach, Puneet Suvana, Mihir Tungare, Fatemeh Shahedipou-Sandvik
Publikováno v:
ECS Meeting Abstracts. :2552-2552
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32dd69a416f63a3a714f156795ff736e
https://doi.org/10.1149/ma2012-02/30/2552
https://doi.org/10.1149/ma2012-02/30/2552