Výsledky vyhledávání - "Faschinger, W."

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Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells

Autor: Astakhov, G. V., Kochereshko, V. P., Yakovlev, D. R., Ossau, W., Nurnberger, J., Faschinger, W., Landwehr, G., Wojtowicz, T., Karczewski, G., Kossut, J.

Publikováno v: Phys. Rev. B, 65 (2002) 115310

An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 10^{9} and 2x10^{11} cm^{-2}. The method is based on an analysis of magneto-re

Externí odkaz: http://arxiv.org/abs/cond-mat/0111593

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Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

Autor: Astakhov, G. V., Yakovlev, D. R., Kochereshko, V. P., Ossau, W., Puls, J., Henneberger, F., Crooker, S. A., McCulloch, Q., Wolverson, D., Gippius, N. A., Faschinger, W., Waag, A.

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged exciton

Externí odkaz: http://arxiv.org/abs/cond-mat/0112002

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Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

Autor: Schott, G. M., Faschinger, W., Molenkamp, L. W.

We perform high resolution X-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low temperature molecular beam epitaxy under different growth conditions. Although all samples are of hig

Externí odkaz: http://arxiv.org/abs/cond-mat/0105562

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