Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Farrukh Yasin"'
Autor:
Irene Battisti, Kevin M. Makles, Marta S. Mucientes, Yan Guo, Erik Simons, Janusz Bogdanowicz, Alain Moussa, Victor Blanco, Farrukh Yasin, Davide Crotti, Anne-Laure Charley, Philippe Leray, Maarten E. van Reijzen, Cornel Bozdog, Hamed M. Sadeghian
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f2a4ad9cbbd20b83a1b70bd62d08ee
https://doi.org/10.1117/12.2616093
https://doi.org/10.1117/12.2616093
Autor:
Mohit Kumar Gupta, Manu Perumkunnil, Farrukh Yasin, Gioele Mirabelli, Kevin Garello, Anshul Gupta, Arnaud Furnemont, Gouri Sankar Kar
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6705a6e1d97a30e497a0c210f899427
https://doi.org/10.1117/12.2613482
https://doi.org/10.1117/12.2613482
Autor:
Gouri Sankar Kar, Sebastien Couet, Pietro Gambardella, Farrukh Yasin, Kevin Garello, Eva Grimaldi, Giacomo Sala, Viola Krizakova
Publikováno v:
Nature Nanotechnology, 15 (2)
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random access memories. To develop faster memory devices, an improvement in the time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e0539c77520339a16d3d0a40d06e552
https://doi.org/10.1038/s41565-019-0607-7
https://doi.org/10.1038/s41565-019-0607-7
Autor:
Manu Perumkunnil Komalan, Mohit Gupta, Siddharth Rao, Woojin Kim, Farrukh Yasin, Sebastien Couet, Arnaud Furnemont, Gouri Sankar Kar
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afa02dbc362a7cbb3a563fcc3e4fb545
https://doi.org/10.1109/edtm53872.2022.9798029
https://doi.org/10.1109/edtm53872.2022.9798029
Autor:
Sandip Halder, Murat Pak, Danilo De Simone, Monique Ercken, Gouri Sankar Kar, D. Crotti, Pieter Vanelderen, Farrukh Yasin, Hubert Hody, Laurent Souriau
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
The read performance of a spin-transfer torque magnetic random-access memory device is based on the tunnel magnetoresistance of the magnetic tunnel junction cell, which is a function of the resistance values at low and high resistance states of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3bd6620483707fcb9c11438b73c0382
https://doi.org/10.1117/12.2515023
https://doi.org/10.1117/12.2515023
Autor:
Kazuhisa Hasumi, Raf Appeltans, Osamu Inoue, Takumichi Sutani, Paulina Rincon Delgadillo, Naoto Horiguchi, Yutaka Okagawa, Masami Ikota, Basoene Briggs, R. Delhougne, Laurent Souriau, Tom Raymaekers, Christopher J. Wilson, Geert Van den bosch, G. L. Donadio, Arnaud Furnemont, Siddharth Rao, Andrea Fantini, Daisy Zhou, D. Crotti, Luca Di Piazza, Anabela Veloso, Takeyoshi Ohashi, Gouri Sankar Kar, Philippe Leray, Astuko Yamaguchi, Chi Lim Tan, Danilo De Simone, Nadine Collaert, Jürgen Bömmels, Toru Ishimoto, Shunsuke Koshihara, Anne-Laure Charley, Farrukh Yasin, Gian Lorusso
Publikováno v:
SPIE Proceedings.
The CD SEM (Critical Dimension Scanning Electron Microscope) is one of the main tools used to estimate Critical Dimension (CD) in semiconductor manufacturing nowadays, but, as all metrology tools, it will face considerable challenges to keep up with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeca0d15a5e982f7de257b7e229a4437
https://doi.org/10.1117/12.2257468
https://doi.org/10.1117/12.2257468
Autor:
Siddharth Rao, G. L. Donadio, Farrukh Yasin, Masami Ikota, Kazuhisa Hasumi, Osamu Inoue, Gian Lorusso, Takeyoshi Ohashi, Gouri Sankar Kar, Atsuko Yamaguchi
Publikováno v:
SPIE Proceedings.
A methodology to evaluate the memory cell property of STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory) with a CD-SEM (Critical Dimension-Scanning Electron Microscope) was proposed. STTMRAM is one of the promising candidates among various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a150c22363fe25f93aa972585a485b4e
https://doi.org/10.1117/12.2257908
https://doi.org/10.1117/12.2257908
Autor:
Guido Groeseneken, S. Van Beek, Johan Swerts, D. Crotti, Sebastien Couet, Y. C. Wu, J. Van Houdt, Johanna K. Jochum, Farrukh Yasin, Gouri Sankar Kar, Kevin Garello, Laurent Souriau, M. J. Van Bael, Enlong Liu, S. Kundu, W. Kim, Siddharth Rao
Publikováno v:
Applied Physics Letters. 113:142405
© 2018 Author(s). Analogous device parameters in both the parallel (P) and anti-parallel (AP) states ensure a symmetric spin-transfer-torque magnetic random-access memory operation scheme. In this study, however, we observe an increasing asymmetry i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb0cfb0093cfb074989e9b2437f2db68
https://doi.org/10.1063/1.5042028
https://doi.org/10.1063/1.5042028