Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Farooq A. Khanday"'
Publikováno v:
IEEE Access, Vol 9, Pp 80158-80169 (2021)
In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for
Externí odkaz:
https://doaj.org/article/f94788d60ed4442db44ae3dbc3ad78dd
Autor:
Farooq A. Khanday, Nisar A. Shah
Publikováno v:
Maejo International Journal of Science and Technology, Vol 7, Iss 03, Pp 422-432 (2013)
Novel l ow-voltage first-order and second-order square-root-domain all-pass filters derived systematically by means of transfer function decomposition and state -space synthesis techniques are proposed. The employment of only a few geometric-mean cel
Externí odkaz:
https://doaj.org/article/e21ab91e2eba4d328c43f9d7f80b9878
Publikováno v:
IEEE Access, Vol 12, Pp 10961-10969 (2024)
In this paper, a novel structure of multilayer organic photovoltaic cell has been designed and simulated. The integration of Poly(3-hexylthiophene-2,5-diyl) (P3HT) buffer layer and Poly(9,9-bis(3’-(N,N-dimethyl) N- ethylammoinium propyl-2,7-fluoren
Externí odkaz:
https://doaj.org/article/2405780d4a3d4a44b458132582ccb4c0
Autor:
Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Bature Isyaku, Shagun Gupta, Farooq Ahmad Khanday, Anupam Chattopadhyay, Haider Abbas
Publikováno v:
Nanoscale Research Letters, Vol 18, Iss 1, Pp 1-49 (2023)
Abstract The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventi
Externí odkaz:
https://doaj.org/article/2faef28b49dc4216954e76a2be514fcf
Publikováno v:
Journal of Electronic Materials. 52:1829-1839
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f60b0e6d34897c3fbffc976a6144bb9
https://doi.org/10.1007/s11664-022-10171-2
https://doi.org/10.1007/s11664-022-10171-2
Publikováno v:
Medical & Biological Engineering & Computing. 61:927-950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1db6d81a8dcea36e795ea7211d334a
https://doi.org/10.1007/s11517-022-02763-1
https://doi.org/10.1007/s11517-022-02763-1
Publikováno v:
Materials Today: Proceedings. 74:344-348
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104058f3a4bb21d0ad3c2a786231c9a2
https://doi.org/10.1016/j.matpr.2022.08.318
https://doi.org/10.1016/j.matpr.2022.08.318
Publikováno v:
Materials Today: Proceedings. 74:401-406
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c780d62f2d6bd4fd1fde62048900660
https://doi.org/10.1016/j.matpr.2022.09.463
https://doi.org/10.1016/j.matpr.2022.09.463
Publikováno v:
IEEE Transactions on NanoBioscience. 21:542-548
In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a biosensing device with improved sensitivity. The proposed device uses dual material gate with work functions of 4.2 eV (Al) and 4.8 eV (Cu) and Hafnium Oxide (HfO2) as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2120b13cdba6b570ed33739ff11e851e
https://doi.org/10.1109/tnb.2021.3131372
https://doi.org/10.1109/tnb.2021.3131372
Autor:
P. Arun Mozhi Devan, Fawnizu Azmadi Hussin, Rosdiazli Ibrahim, Kishore Bingi, Farooq Ahmad Khanday
Publikováno v:
Sensors, Vol 21, Iss 15, p 4951 (2021)
Industrialization has led to a huge demand for a network control system to monitor and control multi-loop processes with high effectiveness. Due to these advancements, new industrial wireless sensor network (IWSN) standards such as ZigBee, WirelessHA
Externí odkaz:
https://doaj.org/article/60fd8b9a14d84396b7c7c9d0f62a77f4