Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Farookh Moogat"'
Autor:
Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47008f5399daa8e72a447ff3fe409ad
https://doi.org/10.1109/isscc42614.2022.9731110
https://doi.org/10.1109/isscc42614.2022.9731110
Autor:
Debasish Dwibedy, Sulagna Dey, Prashant Swarnkar, Patrick Hong, Mitsuyuki Watanabe, Koichiro Hayashi, Jiawei Tao, Chang Siau, Juan Lee, Kapil Verma, Jonathan Huynh, Subodh Taigor, William Mak, Takuya Ariki, Yoshihiko Kamata, Zameer Papasaheb, Hiroyuki Mizukoshi, Takuyo Kodama, Toru Miwa, Norihiro Kamae, Trung Pham, Naoki Ookuma, Ryuji Yamashita, Ching-Huang Lu, Meiling Wei, Tsutomu Higuchi, Hitoshi Miwa, Masahide Matsumoto, Rangarao Samineni, Farookh Moogat, Yuzuru Namai, Yingda Dong, Vivek Saraf, Shunichi Toyama, Muralikrishna Balaga, Aditya Pradhan, Hiroki Yabe, Minoru Yamashita, Sung-En Wang, Kazuhide Yoneya, Ying Yu, Samiksha Agarwal, Gopinath Balakrishnan, Thushara Xavier, Manabu Sakai, Xiaohua Zhang, Yuko Utsunomiya, Yosuke Kato, Sahil Deora, Shuo Chen, Yankang He, Sagar Magia, Akshay Petkar, Hardwell Chibvongodze, Swaroop Kulkarni, Shingo Zaitsu, Toshio Yamamura
Publikováno v:
ISSCC
High floating-gate (FG) to FG coupling and lithography limitations have been preventing 2D-NAND flash from further reduction in die size, (e.g., there is no ISSCC paper discussing a 3b/cell 2D-NAND after 2013 [1,2]). Alternatively, since high-density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695c61bd386f24bc627c57ec2303193d
https://doi.org/10.1109/isscc.2017.7870328
https://doi.org/10.1109/isscc.2017.7870328
Autor:
Sridhar Yadala, T. Ip, James Lan, Sharon Huynh, C. Liang, J. Lakshmipathi, Khanh Nguyen, Hung-Szu Lin, D. Pantelakis, Mehrdad Mofidi, Teruhiko Kamei, Long Pham, Siu Chan, Jeffrey W. Lutze, V. Sakhamuri, Jason Li, Jong Hak Yuh, Junnhui Yang, Koichi Kawakami, Kishan Pradhan, Yan Li, P. Kliza, Masaaki Higashitani, James Chan, Khin Htoo, Tai-Yuan Tseng, Alan Li, Yasuyuki Fukuda, Binh Quang Le, Shu-Fen Chang, Raul Adrian Cernea, Khandker N. Quader, Hideo Mukai, Subodh Taigor, Shouchang Tsao, Yingda Dong, Takumi Abe, Farookh Moogat, Fanglin Zhang, H. Nasu, Cynthia Hsu, Jayson Hu, Feng Pan
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:186-194
A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word line and by using additional performance enhancement modes. The same chip operating as an 8 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980db025a0a03d7fcad3f78887bc65af
https://doi.org/10.1109/jssc.2008.2007152
https://doi.org/10.1109/jssc.2008.2007152
Autor:
Byungki Woo, Tai-Yuan Tseng, Jang Yong Kang, Nima Mokhlesi, M. Watanabe, Ruchi Puri, Pavithra Souriraj, Hao Nguyen, Kwang-ho Kim, Jim Chan, Ritu Shrivastava, Alex Chu, Farookh Moogat, Raul Adrian Cernea, Seungpil Lee, Jong Yuh, Emilio Yero, Mitsuaki Honma, Mehrdad Mofidi, Venky Ramachandra, Feng Pan, Grishma Shah, Kazumi Ino, Sharon Huynh, Hung-Szu Lin, Yan Li, Chen Chen, Viski Popuri, Khandker N. Quader, Ken Oowada, Jason Li, Tuan Pham, Madpur Ravindra Arjun, Yoshihisa Watanabe, Ray Gao, Cuong Quoc Trinh, James Lan, Min She, Yi-Chieh Chen, Cynthia Hsu, Yi-Fang Chen, Masaaki Higashitani, Suman Tenugu, Daniel Yang, Khin Htoo, Binh Quang Le, Yupin Fong, Jonathan Huynh, Teruhiko Kamei, Qui Nguyen, Dinesh Tadepalli, William Mak, Behdad Azarbayjani, Patrick Hong, Long Pham, Frank Tsai
Publikováno v:
ISSCC
Since the first 3b/cell (X3) NAND flash memory paper in ISSCC 2008 [1], market demand for applications using high-density low-cost flash memory such as tablets, smart phones, and SSDs, has increased rapidly. Various electronic devices already use X3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb12a83b7abebea27139110adb59dd3e
https://doi.org/10.1109/isscc.2012.6177080
https://doi.org/10.1109/isscc.2012.6177080
Autor:
D. Pantelakis, Hung-Szu Lin, K. Kawakamr, P. Kliza, Kishan Pradhan, Shu-Fen Chang, Jason Li, Masaaki Higashitani, Sridhar Yadala, Feng Pan, Jong Park, Jayson Hu, Junhui Yang, Takumi Abe, Yan Li, Khin Htoo, Khanh Nguyen, Farookh Moogat, Fanglin Zhang, Binh Quang Le, V. Sakhamuri, Raul-Adrian Cernea, Siu Chan, H. Mukai, H. Nasu, Cynthia Hsu, Khandker N. Quader, Tai-Yuan Tseng, Yasuyuki Fukuda, Yingda Dong, Shouchang Tsao, Subodh Taigor, Long Pham, Jeffrey W. Lutze, James Chan, A. Li, T. Ip, Teruhiko Kamei, James Lan, J. Lakshmipathi, C. Liang, Mehrdad Mofidi, Sharon Huynh
Publikováno v:
ISSCC
In the diverse world of NAND flash applications, higher storage capacity is not the only imperative. Increasingly, performance is a differentiating factor and is also a way of creating new markets or expanding existing markets. While conventional mem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbed9141e70c4fcd75fd32d318e69dcc
https://doi.org/10.1109/isscc.2008.4523236
https://doi.org/10.1109/isscc.2008.4523236
Autor:
Cernea, R., Long Pham, Farookh Moogat, Siu Chan, Binh Le, Yan Li, Shouchang Tsao, Tai-Yuan Tseng, Khanh Nguyen, Li, J., Hu, J., Jong Park, Hsu, C., Fanglin Zhang, Kamei, T., Nasu, H., Kliza, P., Khin Htoo, Lutze, J., Yingda Dong
Publikováno v:
2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2008, p420-624, 205p
Conference
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