Zobrazeno 1 - 10
of 637
pro vyhledávání: '"Farmer, P. B."'
Autor:
Ho, Po-Hsun, Farmer, Damon B., Tulevski, George S., Han, Shu-Jen, Bishop, Douglas M., Gignac, Lynne M., Bucchignano, Jim, Avouris, Phaedon, Falk, Abram L.
Publikováno v:
Proc. Nat. Acad. Sci., 115, 12662-12667 (2018)
In cavity quantum electrodynamics, optical emitters that are strongly coupled to cavities give rise to polaritons with characteristics of both the emitters and the cavity excitations. We show that carbon nanotubes can be crystallized into chip-scale,
Externí odkaz:
http://arxiv.org/abs/1803.01087
Autor:
Engel, Michael, Farmer, Damon B., Azpiroz, Jaione Tirapu, Seo, Jung-Woo T., Kang, Joohoon, Avouris, Phaedon, Hersam, Mark C., Krupke, Ralph, Steiner, Mathias
Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface f
Externí odkaz:
http://arxiv.org/abs/1802.07599
Autor:
Chiu, Kuan-Chang, Falk, Abram L., Ho, Po-Hsun, Farmer, Damon B., Tulevski, George, Lee, Yi-Hsien, Avouris, Phaedon, Han, Shu-Jen
Publikováno v:
Nano Lett ASAP (2017)
Low-dimensional plasmonic materials can function as high quality terahertz and infrared antennas at deep subwavelength scales. Despite these antennas' strong coupling to electromagnetic fields, there is a pressing need to further strengthen their abs
Externí odkaz:
http://arxiv.org/abs/1706.07820
Autor:
Falk, Abram L., Chiu, Kuan-Chang, Farmer, Damon B., Cao, Qing, Tersoff, Jerry, Lee, Yi-Hsien, Avouris, Phaedon, Han, Shu-Jen
Publikováno v:
Phys. Rev. Lett. 118, 257401 (2017)
Carbon nanotubes provide a rare access point into the plasmon physics of one-dimensional electronic systems. By assembling purified nanotubes into uniformly sized arrays, we show that they support coherent plasmon resonances, that these plasmons enha
Externí odkaz:
http://arxiv.org/abs/1702.03312
Autor:
Deng, Bingchen, Guo, Qiushi, Li, Cheng, Wang, Haozhe, Ling, Xi, Farmer, Damon B., Han, Shu-jen, Kong, Jing, Xia, Fengnian
Publikováno v:
ACS Nano, 2016, 10 (12), pp 11172-11178
Plasmons in graphene nanostructures show great promise for mid-infrared applications ranging from a few to tens of microns. However, mid-infrared plasmonic resonances in graphene nanostructures are usually weak and narrow-banded, limiting their poten
Externí odkaz:
http://arxiv.org/abs/1612.05119
Publikováno v:
Phys. Rev. B 93, 125407 (2016)
Interactions between localized plasmons in proximal nanostructures is a well-studied phenomenon. Here we explore plasmon plasmon interactions in connected extended systems. Such systems can now be easily produced using graphene. Specifically we emplo
Externí odkaz:
http://arxiv.org/abs/1510.04216
Autor:
Zhu, Wenjuan, Low, Tony, Lee, Yi-Hsien, Wang, Han, Farmer, Damon B., Kong, Jing, Xia, Fengnian, Avouris, Phaedon
Publikováno v:
Nature Communications Vol.5, Article number: 3087, Jan. 17th 2014
Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer mol
Externí odkaz:
http://arxiv.org/abs/1401.4951
Autor:
Steiner, Mathias, Engel, Michael, Lin, Yu-Ming, Wu, Yanqing, Jenkins, Keith, Farmer, Damon B., Humes, Jefford J., Yoder, Nathan L., Seo, Jung-Woo T., Green, Alexander A., Hersam, Mark C., Krupke, Ralph, Avouris, Phaedon
Publikováno v:
Applied Physics Letters 101, 053123 (2012)
We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm,
Externí odkaz:
http://arxiv.org/abs/1208.0756
Autor:
Lin, Yu-Ming, Farmer, Damon B., Jenkins, Keith A., Wu, Yanqing, Tedesco, L., Myers-Ward, Rachael L., Eddy Jr., Charles R., Gaskill, D. Kurt, Dimitrakopoulos, Christos, Avouris, Phaedon
Publikováno v:
IEEE Electron Device Letters vol. 32, pp. 1343-1345 (2011)
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5
Externí odkaz:
http://arxiv.org/abs/1111.1698
Autor:
Lin, Yu-Ming, Dimitrakopoulos, Christos, Farmer, Damon B., Han, Shu-Jen, Wu, Yanqing, Zhu, Wenjuan, Gaskill, D. Kurt, Tedesco, Joseph L., Myers-Ward, Rachael L., Eddy Jr., Charles R., Grill, Alfred, Avouris, Phaedon
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene
Externí odkaz:
http://arxiv.org/abs/1009.0183