Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Farley, N. R. S"'
Autor:
Casiraghi, A., Rushforth, A. W., Wang, M., Farley, N. R. S, Wadley, P., Hall, J. L., Staddon, C. R., Edmonds, K. W., Campion, R. P., Foxon, C. T., Gallagher, B. L.
We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able t
Externí odkaz:
http://arxiv.org/abs/1006.2644
Autor:
Rushforth, A W, Wang, M, Farley, N R S, Campion, R C, Edmonds, K W, Staddon, C R, Foxon, C T, Gallagher, B L
Publikováno v:
JOURNAL OF APPLIED PHYSICS 104, 073908 (2008)
We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal tha
Externí odkaz:
http://arxiv.org/abs/0807.1469
Autor:
Edmonds, K. W., van der Laan, G., Farley, N. R. S., Arenholz, E., Campion, R. P., Foxon, C. T., Gallagher, B. L.
We demonstrate sensitivity of the Mn 3d valence states to strain in the ferromagnetic semiconductors (Ga,Mn)As and (Al,Ga,Mn)As, using x-ray magnetic circular dichroism (XMCD). The spectral shape of the Mn $L_{2,3}$ XMCD is dependent on the orientati
Externí odkaz:
http://arxiv.org/abs/0802.2061
Autor:
Freeman, A. A., Edmonds, K. W., van der Laan, G., Campion, R. P., Farley, N. R. S., Rushforth, A. W., Johal, T. K., Foxon, C. T., Gallagher, B. L., Rogalev, A., Wilhelm, F.
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is obse
Externí odkaz:
http://arxiv.org/abs/0801.0673
Autor:
Jungwirth, T., Masek, J., Wang, K. Y., Edmonds, K. W., Sawicki, M., Polini, M., Sinova, Jairo, MacDonald, A. H., Campion, R. P., Zhao, L. X., Farley, N. R. S., Johal, T. K., van der Laan, G., Foxon, C. T., Gallagher, B. L.
We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coup
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508255
Autor:
Sawicki, M., Wang, K-Y., Edmonds, K. W., Campion, R. P., Staddon, C. R., Farley, N. R. S., Foxon, C. T., Papis, E., Kaminska, E., Piotrowska, A., Dietl, T., Gallagher, B. L.
Publikováno v:
Phys. Rev. B 71, 121302(R) (2005)
We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it can be rotated from the [-110] direction to the [110] direction by low
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410544
Autor:
Farley, N. R. S., Staddon, C. R., Zhao, L. X., Edmonds, K. W., Gallagher, B. L., Gregory, D. H.
A novel sol-gel route to c-axis orientated undoped and Co, Fe, Mn and V doped ZnO films is reported. Sols were prepared from a hydrated zinc acetate precursor and dimethyl formamide (DMF) solvent. Films were spin-coated on to hydrophilic sapphire sub
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307254
Autor:
Edmonds, K. W., Boguslawski, P., Wang, K. Y., Campion, R. P., Farley, N. R. S., Gallagher, B. L., Foxon, C. T., Sawicki, M., Dietl, T., Nardelli, M. B., Bernholc, J.
Publikováno v:
Physical Review Letters 92, 037201 (2004)
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain s
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307140
Autor:
Edmonds, K. W., Wang, K. Y., Campion, R. P., Neumann, A. C., Farley, N. R. S., Gallagher, B. L., Foxon, C. T.
We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is unambiguous
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209554
Autor:
Horák, L., Holý, V., Staddon, C. R., Farley, N. R. S., Novikov, S. V., Campion, R. P., Foxon, C. T.
Publikováno v:
Journal of Applied Physics; Nov2008, Vol. 104 Issue 10, p103504, 5p, 4 Diagrams, 1 Chart, 3 Graphs
