Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Farida Hamadache"'
Publikováno v:
ECS Transactions. 33:209-225
The Photoelectrical properties of hydrogenated amorphous silicon thin films (a-Si:H) deposited on porous silicon (PSi) were investigated. Porous Si layers were formed by electrochemical etching of p+-type crystalline Si in a hydrofluoric solution, wh
Autor:
Bernard Gelloz, Farida Hamadache
Publikováno v:
physica status solidi c. 6:1689-1693
This work reports on the use of the cyclic voltammetry technique to study the electrochemical behavior of porous p/sup +/-type silicon (PS) contacted by aqueous solutions containing Fe/sup 2+/ and Co/sup 2+/electro-actives species. Current-potential
Publikováno v:
Materials Science Forum. 609:129-132
This communication reports on the effect of thermal annealing on the physicochemical and electrical properties of boron doped amorphous silicon thin films deposited by reactive magnetron sputtering in a mixture of argon and hydrogen atmosphere. The I
Publikováno v:
ECS Meeting Abstracts. :1356-1356
not Available.