Výsledky vyhledávání - "Farida Hamadache"

Photoelectrical Properties of a-Si:H Thin Films Deposited on Porous Silicon by DC-Magnetron Sputtering

Autor: Lyes Zougar, Amer Brighet, Bernard Gelloz, Kamel Mokeddem, Farida Hamadache

Publikováno v: ECS Transactions. 33:209-225

The Photoelectrical properties of hydrogenated amorphous silicon thin films (a-Si:H) deposited on porous silicon (PSi) were investigated. Porous Si layers were formed by electrochemical etching of p+-type crystalline Si in a hydrofluoric solution, wh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e6f1542efb08e43342cae12df36e5a6
https://doi.org/10.1149/1.3553172

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Carrier transport mechanisms in cathodically biased meso‐porous p + ‐Si against solutions containing Fe 2+ and Co 2+ species

Autor: Bernard Gelloz, Farida Hamadache

Publikováno v: physica status solidi c. 6:1689-1693

This work reports on the use of the cyclic voltammetry technique to study the electrochemical behavior of porous p/sup +/-type silicon (PS) contacted by aqueous solutions containing Fe/sup 2+/ and Co/sup 2+/electro-actives species. Current-potential

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e429779a0bdbec3e1955b3b52b5cb5b2
https://doi.org/10.1002/pssc.200881079

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Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing

Autor: M. Aoucher, Farida Hamadache, Rabah Cherfi, H.Y. Seba

Publikováno v: Materials Science Forum. 609:129-132

This communication reports on the effect of thermal annealing on the physicochemical and electrical properties of boron doped amorphous silicon thin films deposited by reactive magnetron sputtering in a mixture of argon and hydrogen atmosphere. The I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a7e9b399655dbf360a4d0beb13a6e7b
https://doi.org/10.4028/www.scientific.net/msf.609.129

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