Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Farid Temcamani"'
Publikováno v:
Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering). 11:181-187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943d3c7380141fb66cacb3719b79ae0b
https://doi.org/10.2174/2352096511666180116144447
https://doi.org/10.2174/2352096511666180116144447
Publikováno v:
International Journal of Electronics and Telecommunications. 63:227-232
In this paper, a new active grounded inductor controlled in current is described. This structure is realized using negative second generation current controlled conveyors and a single grounded capacitor, with no external resistance. The proposed circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566adae2127ff75f7a430608c30466ff
https://doi.org/10.1515/eletel-2017-0030
https://doi.org/10.1515/eletel-2017-0030
Autor:
Moulhime El Bekkali, Wafae El Hamdani, Imane Halkhams, Mahmoud Mehdi, Said Mazer, Farid Temcamani
Publikováno v:
Contemporary Engineering Sciences. 10:193-202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8834d98a69d5ecabecb339a4839b95eb
https://doi.org/10.12988/ces.2017.611172
https://doi.org/10.12988/ces.2017.611172
Publikováno v:
Analog Integrated Circuits and Signal Processing. 90:199-205
In this paper, a new current controlled instrumentation amplifier structure is proposed. The introduced circuit uses three current controlled conveyors and a single grounded resistor. This structure offers several enhanced advantages in comparison wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71ba3a9bd113c530e2f7136eece9bb6
https://doi.org/10.1007/s10470-016-0873-3
https://doi.org/10.1007/s10470-016-0873-3
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (3), pp.756-766. ⟨10.1109/TMTT.2016.2519342⟩
International audience; Failure mechanisms in AlGaN/GaN HEMT RF power amplifiers implemented on silicon substrate and envisaging radar operating conditions are investigated in this paper. Several power amplifier prototypes have been designed, fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4d8ddb7544e5bddf41004b6e5586d8e
https://doi.org/10.1109/tmtt.2016.2519342
https://doi.org/10.1109/tmtt.2016.2519342
Publikováno v:
ESREF 2015
ESREF 2015, Oct 2015, Toulouse, France
ESREF 2015, Oct 2015, Toulouse, France
International audience; GaN High Electron Mobility Transistors (HEMTs) are very promising for high power switching and radiofrequency operation. However, the lack of reliability feedback is one of its major drawbacks. Trapping effect especially is on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f5823af0c58479e29d895bd87c29cdf
https://doi.org/10.1016/j.microrel.2015.06.074
https://doi.org/10.1016/j.microrel.2015.06.074
Publikováno v:
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.531-538. ⟨10.1109/TDMR.2017.2733519⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2017, 17 (3), pp.531-538. ⟨10.1109/TDMR.2017.2733519⟩
IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.531-538. ⟨10.1109/TDMR.2017.2733519⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2017, 17 (3), pp.531-538. ⟨10.1109/TDMR.2017.2733519⟩
This paper proposes studying the effects of thermal storage on the reliability of passive ultra-high frequency radio-frequency identification tags. Two types of tags M1 and M2 from two different manufacturers are aged under two high temperatures equa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2776483e896e60f4bb1280a649ec6fd2
https://hal.science/hal-01619293/document
https://hal.science/hal-01619293/document
Publikováno v:
ATSIP
A novel structure of current controlled negative resistance is presented in this paper. It has a very useful role in many analog circuits like oscillators and bandpass filters. The negative resistance circuit, which requires no external passive compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf140b180b3b4d70dfd5bb0edcba9f1
https://doi.org/10.1109/atsip.2017.8075606
https://doi.org/10.1109/atsip.2017.8075606
Publikováno v:
2017 International Conference on Wireless Technologies, Embedded and Intelligent Systems (WITS).
This paper presents a second-order bandpass active filter that operates in current-mode. The circuit is implemented from second generation current controlled conveyors with different polarization and grounded capacitors. The proposed filter, implemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3774c2b643bd59bc13d65a89e3c57e
https://doi.org/10.1109/wits.2017.7934681
https://doi.org/10.1109/wits.2017.7934681
Publikováno v:
ESREF 2016
ESREF 2016, Sep 2016, Saale, Germany
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2016, 64, pp.585-588. ⟨10.1016/j.microrel.2016.07.123⟩
Microelectronics Reliability, 2016, 64, pp.585-588. ⟨10.1016/j.microrel.2016.07.123⟩
ESREF 2016, Sep 2016, Saale, Germany
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2016, 64, pp.585-588. ⟨10.1016/j.microrel.2016.07.123⟩
Microelectronics Reliability, 2016, 64, pp.585-588. ⟨10.1016/j.microrel.2016.07.123⟩
The reliability of RF AlGaN/GaN HEMT devices on SiC substrate is investigated here in pulsed RF condition at nominal and maximum rating drain quiescent bias. During these 3500 hour tests, high voltage especially during the RF pulse leads to a progres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::420d54575d5be702861ba64909b771f2
https://hal.archives-ouvertes.fr/hal-01687227
https://hal.archives-ouvertes.fr/hal-01687227