Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Farid Medjdoub"'
Autor:
Youssef Hamdaoui, Sofie S. T. Vandenbroucke, Sondre Michler, Katir Ziouche, Matthias M. Minjauw, Christophe Detavernier, Farid Medjdoub
Publikováno v:
Micromachines, Vol 15, Iss 9, p 1157 (2024)
In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using patterned TLMs (Tr
Externí odkaz:
https://doaj.org/article/71885d60057c4c42ac01fad618bb5f13
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 016503 (2023)
High-quality pseudo-vertical p–n diodes using a GaN-on-silicon heterostructure are reported. An optimized fabrication process including a beveled deep mesa as edge termination and reduced ohmic contact resistances enabled high on-state current dens
Externí odkaz:
https://doaj.org/article/ad9dd0e1c3fa4c5a95e284c931a18d3c
Autor:
Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, Farid Medjdoub
Publikováno v:
Micromachines, Vol 14, Iss 2, p 291 (2023)
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-th
Externí odkaz:
https://doaj.org/article/a4a7fe78fe7748e080c7db3cc4a85856
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1519 (2022)
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate,
Externí odkaz:
https://doaj.org/article/076f867140964040b8b130b7629d2dec
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1145-1150 (2019)
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10
Externí odkaz:
https://doaj.org/article/b6fd3c8bb901418989b19f37d85d944b
Autor:
Farid Medjdoub
Publikováno v:
Micromachines, Vol 12, Iss 1, p 83 (2021)
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era [...]
Externí odkaz:
https://doaj.org/article/16583ed776c3468ebab6b82379272b3d
Autor:
Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publikováno v:
Materials, Vol 13, Iss 19, p 4271 (2020)
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (refe
Externí odkaz:
https://doaj.org/article/88176e92e6d1424b87da93eeff80f28b
Autor:
Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publikováno v:
Micromachines, Vol 11, Iss 1, p 101 (2020)
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy
Externí odkaz:
https://doaj.org/article/5f6cca3341cf44bf829b66521fed87ef
Autor:
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub
Publikováno v:
Micromachines, Vol 10, Iss 10, p 690 (2019)
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown volta
Externí odkaz:
https://doaj.org/article/802ee7d0f8cc453e8a1d92b9d0d01a54
Autor:
Carlo De Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub, Boris Kalinic, Tiziana Cesca, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
Materials, Vol 11, Iss 1, p 153 (2018)
The aim of this work is to present a potential application of gallium nitride-based optoelectronic devices. By using a laser diode and a photodetector, we designed and demonstrated a free-space compact and lightweight wireless power transfer system,
Externí odkaz:
https://doaj.org/article/49ae8d97c29e4bee95914c884b087656