Výsledky vyhledávání - "Farha Y. Siddiqui"

Investigation on the effect of copper doping on CdS1-xSex thin films

Autor: Farha Y. Siddiqui, Deepak S. Upadhye, Nanasaheb P. Huse, Avinash S. Dive, Shaheed U. Shaikh, Ramphal Sharma

Publikováno v: Ferroelectrics. 518:153-162

Here we report the generation of Cu2S nanoparticles within CdS0.8Se0.2 using cost effective chemical bath deposition technique on a glass substrate. The As-deposited CdS0.8Se0.2 films were doped wi...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d67f0d7b68b0bdeb27ebc81506b02f9
https://doi.org/10.1080/00150193.2017.1360638

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Modification of photosensing property of CdS–Bi2S3 bi-layer by thermal annealing and swift heavy ion irradiation

Autor: Farha Y. Siddiqui, Shaheed U. Shaikh, Pawan K. Kulriya, Deodatta M. Phase, Fouran Singh, Ramphal Sharma

Publikováno v: Materials Chemistry and Physics. 169:6-12

The CdS–Bi2S3 bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 °C. The air ann

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0ed96252a69e82537528debc8f29956
https://doi.org/10.1016/j.matchemphys.2015.11.009

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Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS–Bi2S3 thin films prepared by solution growth technique at room temperature

Autor: Shaheed U. Shaikh, Farha Y. Siddiqui, Deepali J. Desale, Ramphal Sharma, Pawan K. Kulriya, Anil V. Ghule, Fouran Singh

Publikováno v: Radiation Physics and Chemistry. 106:193-198

CdS–Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3815ac9e4b20c6993f0689781dd6d1ef
https://doi.org/10.1016/j.radphyschem.2014.07.017

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Band gap engineering by substitution of S by Se in nanostructured CdS1−xSex thin films grown by soft chemical route for photosensor application

Autor: Sandeep Mahajan, Anil V. Ghule, Shaheed U. Shaikh, Deepali J. Desale, Pankaj Varshney, Ramphal Sharma, Sung-Hwan Han, Farha Y. Siddiqui, Deepak S. Upadhye

Publikováno v: Materials Science in Semiconductor Processing. 27:404-411

Ternary alloys of CdS1−xSex (x=0, x=0.2, x=0.4, x=0.6, x=0.8, x=1) thin films were prepared on to glass substrates by a simple and economical soft chemical route (chemical bath deposition) at 50° to 80 °C in air. The as-grown films were character

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a9171ee8c8cfd4d5154844fe66cf14d
https://doi.org/10.1016/j.mssp.2014.07.014

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Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Autor: Anil V. Ghule, Ravikiran Late, Shaeed Shaikh, Farha Y. Siddiqui, Ravikiran Birajdar, Ramphal Sharma, Dipalee J. Desale

Publikováno v: Composites Part B: Engineering. 46:1-6

Bi2S3 thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1b5119477e5f3968ea19ae74895e90d
https://doi.org/10.1016/j.compositesb.2012.11.011

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Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

Autor: Farha Y. Siddiqui, Arindam Ghosh, Anil V. Ghule, Shaheed U. Shaikh, Ramphal Sharma, Dipalee J. Desale, Ravikiran B. Birajadar

Publikováno v: Materials Research Bulletin. 47:3440-3444

CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subseq

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63418cbfbb21a6f5ddcfd9e89a3872af
https://doi.org/10.1016/j.materresbull.2012.07.009

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Preparation and characterization of CdS–Bi2S3 nanocomposite thin film by successive ionic layer adsorption and reaction (SILAR) method

Autor: Arindam Ghosh, Shaheed U. Shaikh, Anil V. Ghule, Farha Y. Siddiqui, Dipalee J. Desale, Ravikiran B. Birajadar, Ramphal Sharma

Publikováno v: Composites Part B: Engineering. 43:1095-1100

CdS, Bi2S3 and CdS–Bi2S3 nanocomposite thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. These films were characterized by X-ray diffraction (XRD), scanning electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc90cd158f76569e543345d06cd8bbab
https://doi.org/10.1016/j.compositesb.2011.11.001

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Nanostructured p-CuIn3Se5/n-CdS heterojunction engineered using simple wet chemical approach at room temperature for photovoltaic application

Autor: Vidya S. Taur, Arindam Ghosh, Anil V. Ghule, Ravikiran B. Birajadar, Rajesh A. Joshi, Farha Y. Siddiqui, Ramphal Sharma, Shaheed U. Shaikh

Publikováno v: Materials Chemistry and Physics. 127:191-196

Herein, we report engineering of nanostructured p -CuIn 3 Se 5 / n -CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu + , In

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0fa3331bc575af4a36fb70b21031b79
https://doi.org/10.1016/j.matchemphys.2011.01.058

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Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

Autor: Nanasaheb P. Huse, Sagar B. Bagul, Farha Y. Siddiqui, Sandip Mahajan, Ramphal Sharma, Ravikiran B. Birajadar, Deepak S. Upadhye, Shaheed U. Shaikh

Publikováno v: AIP Conference Proceedings.

Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni7+ ions with the fluence of 5x1012ions/cm2. The X-ray diffraction study was shows pol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce4166db771c9838631547ec3a326edf
https://doi.org/10.1063/1.4917967

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Mn doped nanostucture ZnO thin film for photo sensor and gas sensor application

Autor: Deepak S. Upadhye, Sandip Mahajan, Anil V. Ghule, Farha Y. Siddiqui, Ravikiran B. Birajadar, Ramphal Sharma, Shahid U. Shaikh

Publikováno v: AIP Conference Proceedings.

Mn doped nanostructure ZnO thin film prepared by soft chemically route method. ZnO thin films were deposited on glass substrate by successive ionic layer adsorption and reaction technique (SILAR). After deposit ZnO thin film dipped in MnSO4 solution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ed251a3996e79db079044f3e396d6a9
https://doi.org/10.1063/1.4791206

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