Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Faran Chang"'
Autor:
Wenguang Zhou, Junkai Jiang, Nong Li, Faran Chang, Guowei Wang, Yingqiang Xu, Donghai Wu, Dongwei Jiang, Hongyue Hao, Weiqiang Chen, Suning Cui, Xueyue Xu, Zhichuan Niu
Publikováno v:
Infrared, Millimeter-Wave, and Terahertz Technologies IX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d3694da708992ebfc870257107a0b3
https://doi.org/10.1117/12.2644100
https://doi.org/10.1117/12.2644100
Autor:
Lei Xiao, Peng Zhu, Nong Li, Faran Chang, Haofei Shi, Xingzhan Wei, Wen Xiong, Tai Sun, Guowei Wang
Publikováno v:
Optics express. 30(21)
InAs/GaSb type-II superlattice materials have attracted in the field of infrared detection due to their high quality, uniformity and stability. The performance of InAs/GaSb type-II superlattice detector is limited by dark noise and light response. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::507cd463f5b66e67751fc58ba7840f8f
https://pubmed.ncbi.nlm.nih.gov/36258391
https://pubmed.ncbi.nlm.nih.gov/36258391
Autor:
Wenguang Zhou, Yan Liang, Nong Li, Faran Chang, Junkai Jiang, Weiqiang Chen, Dongwei Jiang, Hongyue Hao, Donghai Wu, Guowei Wang, Yingqiang Xu, Zhichuan Niu
Publikováno v:
Infrared Physics & Technology. :104763
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b6d6f1ae062906f6b6f0796e324de28
https://doi.org/10.1016/j.infrared.2023.104763
https://doi.org/10.1016/j.infrared.2023.104763
Autor:
Junkai Jiang, Faran Chang, Wenguang Zhou, Nong Li, Weiqiang Chen, Dongwei Jiang, Hongyue Hao, Guowei Wang, Donghai Wu, Yingqiang Xu, Zhi-Chuan Niu
Publikováno v:
Chinese Physics B. 32:038503
High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of ∼ 2.1 μm as predicted from the band structure c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbdc19c38ee1426761a2fd8c8146dd37
https://doi.org/10.1088/1674-1056/acaa2e
https://doi.org/10.1088/1674-1056/acaa2e
Autor:
Abuduwayiti Aierken, Xiaole Ma, Liu Xinxing, Ruiting Hao, Kang Gu, Yong Li, Shuaihui Sun, Bin Liu, Jie Guo, Guoshuai Wei, Faran Chang, Lu Wang
Publikováno v:
Journal of Electronic Materials. 49:1819-1826
In this work, the (Ag,Cu)2ZnSnS4 (ACZTS) thin films were fabricated via sputtering with a multi-target to form different layer stacks, i.e., (S1) ZnS/Sn/Cu/Ag/Mo,(S2) ZnS/Sn/Ag/Cu/Mo and (S3) ZnS/Ag/Sn/Cu/Mo. The stacked precursors were sulfurized th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1186a163cab8a0f7e136e00eec7286f6
https://doi.org/10.1007/s11664-019-07890-4
https://doi.org/10.1007/s11664-019-07890-4
Autor:
Bin Liu, Jie Guo, Ruiting Hao, Yong Li, Faran Chang, Liu Xinxing, Abuduwayiti Aierken, Lu Wang, Kang Gu, Shuaihui Sun, Xiaole Ma, Guoshuai Wei
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:20443-20450
A 25 nm thick Ag thin film was sputtered between the Cu2ZnSnS4 (CZTS) absorber and Mo electrode to improve the back contact in CZTS solar cells. The CZTS absorber was fabricated via a cost-effective N,N-dimethylformamide-based solution method. X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41ee85cd9f63006fdf4f9edd9581865
https://doi.org/10.1007/s10854-019-02383-w
https://doi.org/10.1007/s10854-019-02383-w
Autor:
Lu Wang, Kang Gu, Jie Guo, Liu Xinxing, Ruiting Hao, Yong Li, Faran Chang, Qichen Zhao, Bin Liu
Publikováno v:
Solar Energy. 183:285-292
The uniformly distributed Cu2ZnSnS4 (CZTS) thin films were grown by a simply sputtered method using two sputtered stacking order: ZnS/CuSn/Mo/SLG (T1) and CuSn/ZnS/Mo/SLG (T2). The highly crystalline tetragonal structure CZTS with Cu-poor, Zn-rich co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62434240d4c71ded6e476ec8359b447
https://doi.org/10.1016/j.solener.2019.03.033
https://doi.org/10.1016/j.solener.2019.03.033
Autor:
Nong Li, Guowei Wang, Dongwei Jiang, Wenguang Zhou, Faran Chang, Fangqi Lin, Weiqiang Chen, Junkai Jiang, Xueyue Xu, Lifang She, Suning Cui, Bing Liu, Hongyue Hao, Donghai Wu, Yingqiang Xu, Zhichuan Niu
Publikováno v:
Semiconductor Science and Technology. 37:115010
We report the trap-assisted tunneling current and quantum efficiency (QE) loss in short wavelength infrared In0.22Ga0.78As0.2Sb0.8 photo detectors. Combining experiment data with a current–voltage model, we found that the trap-assisted tunneling cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315791ffe9ba1ca2199a5c8880d4cfff
https://doi.org/10.1088/1361-6641/ac9699
https://doi.org/10.1088/1361-6641/ac9699
Autor:
Junkai Jiang, Guowei Wang, Donghai Wu, Yingqiang Xu, Faran Chang, Wenguang Zhou, Nong Li, Dongwei Jiang, Hongyue Hao, Suning Cui, Weiqiang Chen, Xueyue Xu, Haiqiao Ni, Ying Ding, Zhi-Chuan Niu
Publikováno v:
Optics Express. 30:38208
High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm, respectively. Under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a29a58c744145061a63d56a4e87e39f9
https://doi.org/10.1364/oe.469147
https://doi.org/10.1364/oe.469147
Autor:
Jie Guo, Rui-Ting Hao, Xiaole Ma, Yong Li, Zhichuan Niu, Xiaoming Li, Abuduwayiti Aierken, Guoshuai Wei, Guowei Wang, Yu Zhuang, Faran Chang, Yunpeng Wang, Yingqiang Xu, Kang Gu
Publikováno v:
Optical and Quantum Electronics. 52
The epitaxy properties of GaAs-based GaSb thin films were investigated under different growth conditions to identify suitable smooth areas on GaSb epilayer surface for growing high-quality AlInSb metamorphic buffers. The results showed notable reduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576f7c992a3c46ef4c05aa534367ff30
https://doi.org/10.1007/s11082-020-2247-4
https://doi.org/10.1007/s11082-020-2247-4