Výsledky vyhledávání - "Fanny Dahlquist"

A 2.8kV, Forward Drop JBS Diode with Low Leakage

Autor: Heinz Lendenmann, Jan Olov Svedberg, Fanny Dahlquist, Bo Breitholtz, Carl-Mikael Zetterling, Mikael Östling

Publikováno v: Materials Science Forum. :1179-1182

High voltage Schottky-, Junction Barrier Schottky (JBS)- and PiN-diodes with an implanted JTE termination have been fabricated on the same 4H-SiC wafer. Blocking voltages of 2.5-2.8 kV were reached for JBS and PiN diodes while the Schottky diodes rea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9bcef10b4352dd54ead07430eb0d9ba
https://doi.org/10.4028/www.scientific.net/msf.338-342.1179

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Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Autor: Carl-Mikael Zetterling, Kurt Rottner, Fanny Dahlquist, Mikael Östling

Publikováno v: Materials Science Forum. :1061-1064

The Junction Barrier Schottky (JBS) diode in silicon carbide is a promising candidate for a low-leakage power rectifier for high switching frequencies and elevated temperature operation. It has the advantage of a low forward voltage drop while keepin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8fef191f2870780490f549589682e38
https://doi.org/10.4028/www.scientific.net/msf.264-268.1061

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Junction barrier Schottky diodes in 6H SiC

Autor: Carl-Mikael Zetterling, Lennart Ramberg, Nils Lundberg, Kurt Rottner, Fanny Dahlquist, Mikael Östling

Publikováno v: Solid-State Electronics. 42:1757-1759

Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4fac94835d2a2db6216bdecbc45f452
https://doi.org/10.1016/s0038-1101(98)00142-7

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4.5 kV 4H-SiC diodes with ideal forward characteristic

Autor: M. Irwin, A. Mukhitdinov, H. Bleichner, H. Lendenmann, R. Soderholm, Fanny Dahlquist

Publikováno v: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near theoretical forward voltages of 3.08 V at 100 A/cm/sup 2/ and 4.10 V at 1000 A/cm/sup 2/ at RT (2.96 V and 4.15 V at 125/spl deg/C), while diodes with implanted emitter

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1be9ded64ebb7c0d19571345d8db8cb5
https://doi.org/10.1109/ispsd.2001.934553

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