Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Fangyu Yue"'
Autor:
Hongru Wang, Jing Meng, Jianjun Lin, Bin Xu, Hai Ma, Yucheng Kan, Rui Chen, Lujun Huang, Ye Chen, Fangyu Yue, Chun-Gang Duan, Junhao Chu, Lin Sun
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Light-induced spin currents with the faster response is essential for the more efficient information transmission and processing. Herein, we systematically explore the effect of light illumination energy and direction on the light-induced sp
Externí odkaz:
https://doaj.org/article/d70f981da6e44900b5dc011eecc48de7
Autor:
Fengrui Sui, Haoyang Li, Ruijuan Qi, Min Jin, Zhiwei Lv, Menghao Wu, Xuechao Liu, Yufan Zheng, Beituo Liu, Rui Ge, Yu-Ning Wu, Rong Huang, Fangyu Yue, Junhao Chu, Chungang Duan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer
Externí odkaz:
https://doaj.org/article/e4faeeff1b5e4a73b543db04a1610eed
Autor:
Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian, Junhao Chu, Chungang Duan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, becaus
Externí odkaz:
https://doaj.org/article/98c54ecf4daf47c7ad2b723b003cf161
Publikováno v:
AIP Advances, Vol 14, Iss 3, Pp 035347-035347-8 (2024)
Layered van der Waals (vdw) materials have been proposed as light-absorbing materials for photovoltaic applications. InSe is a layered vdw semiconductor with ultra-high carrier mobility, strong charge transfer ability, super deformability, thermoelec
Externí odkaz:
https://doaj.org/article/ce1f723cd38c45e3bd3606870bc96dc2
Autor:
Fengrui Sui, Haoyang Li, Ruijuan Qi, Min Jin, Zhiwei Lv, Menghao Wu, Xuechao Liu, Yufan Zheng, Beituo Liu, Rui Ge, Yu-Ning Wu, Rong Huang, Fangyu Yue, Junhao Chu, Chungang Duan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/b2e56205078a4882b901c286252ccb92
Autor:
Fengrui Sui, Min Jin, Yuanyuan Zhang, Ruijuan Qi, Yu-Ning Wu, Rong Huang, Fangyu Yue, Junhao Chu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Exploring two-dimensional layered ferroelectric semiconductors is highly desired for ferroelectric-based devices. Here, the authors realize the room-temperature ferroelectricity in layered Y-doped γ-InSe due to the microstructure modifications.
Externí odkaz:
https://doaj.org/article/be83582f3c1845f0ab13ce338bb9dc2c
Autor:
Bobo Tian, Zhuozhuang Xie, Luqiu Chen, Shenglan Hao, Yifei Liu, Guangdi Feng, Xuefeng Liu, Hongbo Liu, Jing Yang, Yuanyuan Zhang, Wei Bai, Tie Lin, Hong Shen, Xiangjian Meng, Ni Zhong, Hui Peng, Fangyu Yue, Xiaodong Tang, Jianlu Wang, Qiuxiang Zhu, Yachin Ivry, Brahim Dkhil, Junhao Chu, Chungang Duan
Publikováno v:
Exploration, Vol 3, Iss 3, Pp n/a-n/a (2023)
Abstract Analog storage through synaptic weights using conductance in resistive neuromorphic systems and devices inevitably generates harmful heat dissipation. This thermal issue not only limits the energy efficiency but also hampers the very‐large
Externí odkaz:
https://doaj.org/article/7554ef40577b4fb7bc510062fb3ac353
Autor:
Xiaoming Wang, Jiajing He, Shenbao Jin, Huan Liu, Hongkai Li, Huimin Wen, Xingyan Zhao, Roozbeh Abedini-Nassab, Gang Sha, Fangyu Yue, Yaping Dan
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 12, Pp n/a-n/a (2022)
The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to turn silicon into a luminescent material, which has been explored
Externí odkaz:
https://doaj.org/article/353abbef48c94ff6bf07ace261adb1e0
Autor:
Sheng Liu, Guoxing Xie, Guishun Li, Shuoying Yu, Xuehui Lu, Shaohua Liu, Fangyu Yue, Chengbin Jing, Junhao Chu
Publikováno v:
Results in Physics, Vol 35, Iss , Pp 105395- (2022)
The rapid development of terahertz (THz) technology makes the study of THz waveguide indispensable. In the current research on terahertz waveguides, there is still a lack of flexible waveguides for stable transmission in hot/cold environments. In thi
Externí odkaz:
https://doaj.org/article/8050110712e842a09dc0d7f93e451e47
Autor:
Guoxing Xie, Yi Zhong, Guishun Li, Changkun She, Xuehui Lu, Fangyu Yue, Shaohua Liu, Chengbin Jing, Ya Cheng, Junhao Chu
Publikováno v:
Results in Physics, Vol 19, Iss , Pp 103534- (2020)
A bendable metal/dielectric hollow waveguide for low-loss transmission of 300 GHz terahertz (THz) radiation was proposed based on polypropylene (PP) tubing materials. The PP tube has low absorption at 300 GHz and the silver reflective film grows well
Externí odkaz:
https://doaj.org/article/1de8ecb5d2eb495bb25438e434778071