Zobrazeno 1 - 6
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pro vyhledávání: '"Fangying Jiao"'
Autor:
Bin Chen, Xue‐Peng Wang, Fangying Jiao, Long Ning, Jiaen Huang, Jiatao Xie, Shengbai Zhang, Xian‐Bin Li, Feng Rao
Publikováno v:
Advanced Science, Vol 10, Iss 25, Pp n/a-n/a (2023)
Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memor
Externí odkaz:
https://doaj.org/article/39bda364588a47589a920eca3189c63c
Autor:
Evan Ma, Yimin Chen, Jun-Qiang Wang, Wei Zhang, Keyuan Ding, Xiang Shen, Lei Wang, Xierong Zeng, Bin Chen, Feng Rao, Kunlong Li, Fangying Jiao
Publikováno v:
Chemistry of Materials. 31:8794-8800
Cache-type phase-change random-access memory is a remaining challenge on the path to universal memory. The recently designed Sc0.2Sb2Te3 (SST) alloy is one of the most promising phase-change materi...
Publikováno v:
Ceramics International. 42:976-981
Na0.5Bi0.5Ti1−xZnxO3−δ (NBTZnx, x=0.005–0.04) thin films were deposited on indium tin oxide coated glass substrates by metal organic decomposition combined with sequential layer annealing. The effects of Zn2+ doping content on crystallization
Publikováno v:
Applied Materials Today. 20:100641
Phase-change random-access memory (PCRAM) is the leading candidate to overcome the intrinsic bottleneck in current von Neumann architecture by unifying computing with storage, enabling its prospect as cognitive memory. However, strong resistance drif
Publikováno v:
Ceramics International. 41:14179-14183
Na0.5Bi0.5Ti0.98Mn0.02O3 (NBTMn) thin films were fabricated on indium tin oxide/glass substrates via chemical solution deposition and annealed at various temperatures from 450 to 600 °C and the influence of annealing temperature on their crystalliza
Publikováno v:
Materials Technology. 30:A172-A175
Na0.5Bi0.5(Ti0.98Mn0.02)O3 (NBTMn) thin film was fabricated on fluorine-doped tin oxide (FTO)/glass substrate via a chemical solution decomposition method. The microstructure and electrical performances of NBTMn thin film were investigated. The XRD p