Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Fangsheng Qian"'
Autor:
Junjie Wang, Fangsheng Qian, Shenming Huang, Ziyu Lv, Yan Wang, Xuechao Xing, Meng Chen, Su-Ting Han, Ye Zhou
Publikováno v:
Advanced Intelligent Systems, Vol 3, Iss 1, Pp n/a-n/a (2021)
By virtue of energy efficiency, high speed, and parallelism, brain‐inspired neuromorphic computing is a promising technology to overcome the von Neumann bottleneck and capable of processing massive sophisticated tasks in the background of big data.
Externí odkaz:
https://doaj.org/article/1cddc99aeee54709b71264c8e660c248
Autor:
Fangsheng Qian, Ruo-Si Chen, Ruopeng Wang, Junjie Wang, Peng Xie, Jing-Yu Mao, Ziyu Lv, Shenghao Ye, Jia-Qin Yang, Zhanpeng Wang, Ye Zhou, Su-Ting Han
Publikováno v:
IEEE Transactions on Electron Devices. 69:6049-6056
Publikováno v:
Journal of Materials Chemistry C. 10:17002-17026
The promising roadmap for boosting the performance of TMD FETs, circuitry applications, perspective of the computing scheme and challenges of current integration technologies have been reviewed.
Publikováno v:
2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
Autor:
Ziyu Lv, Meng Chen, Junjie Wang, Fangsheng Qian, Yan Wang, Xuechao Xing, Su-Ting Han, Kui Zhou, Shenming Huang, Ye Zhou
Publikováno v:
Journal of Materials Chemistry C. 9:3569-3577
The saturation of Moore's law and the finality of Dennard scaling highlight the need for new data-storage approaches employing different physical mechanisms. Due to the low operation voltage, multibit storage and cost-effective manufacturability, mem
Autor:
Su-Ting Han, Yue Gong, Mingtao Luo, Fangsheng Qian, Zhanpeng Wang, Junjie Wang, Zihao Feng, Jiangming Chen, Shenming Huang, Ye Zhou
Publikováno v:
Journal of Materials Chemistry C. 9:15435-15444
Resistive random access memory (RRAM) based on hybrid organic–inorganic halide perovskite (HOIP) materials has recently gained significant interest due to its low activation energy of ion migration. HOIP RRAM has been reported to exhibit outstandin
Autor:
Fangsheng Qian, Jia Zhang
Publikováno v:
Dalton Transactions. 49:10949-10957
In this paper, new upconversion (UC) phosphors for Yb3+-Er3+- and Yb3+-Ho3+-doped Gd9.33(SiO4)6O2 (GSO) were designed via a solid-state reaction method. The phase purity of the samples was examined using XRD patterns. In Yb3+-Er3+ -doped GSO, the cha
Publikováno v:
Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy. 253
Motivated from increasing demands of non-contact optical temperature sensing, the Yb
Autor:
Jia, Zhang, Fangsheng, Qian
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 49(31)
In this paper, new upconversion (UC) phosphors for Yb3+-Er3+- and Yb3+-Ho3+-doped Gd9.33(SiO4)6O2 (GSO) were designed via a solid-state reaction method. The phase purity of the samples was examined using XRD patterns. In Yb3+-Er3+ -doped GSO, the cha
Publikováno v:
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 253:119602
Motivated from increasing demands of non-contact optical temperature sensing, the Yb3+-Er3+ and Eu3+ doped NaY9Si6O26 (NYS) oxide phosphors were designed by high-temperature solid-state reaction method. The phase purity of the as-prepared samples was