Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Fangsen Li"'
Autor:
Le Lei, Jiaqi Dai, Haoyu Dong, Yanyan Geng, Feiyue Cao, Cong Wang, Rui Xu, Fei Pang, Zheng-Xin Liu, Fangsen Li, Zhihai Cheng, Guang Wang, Wei Ji
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract Polymorphic structures of transition metal dichalcogenides (TMDs) host exotic electronic states, like charge density wave and superconductivity. However, the number of these structures is limited by crystal symmetries, which poses a challeng
Externí odkaz:
https://doaj.org/article/5d3039b4b5fa42a498c8eb726cfdbd71
Autor:
Kang Lai, Sailong Ju, Hongen Zhu, Hanwen Wang, Hongjian Wu, Bingjie Yang, Enrui Zhang, Ming Yang, Fangsen Li, Shengtao Cui, Xiaohui Deng, Zheng Han, Mengjian Zhu, Jiayu Dai
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-7 (2022)
Conventionally, the in-plane electronic band structure anisotropy originates from the low crystallographic symmetry in the layered material. Here, using angle-resolved photoemission spectroscopy and density functional theory the authors report that t
Externí odkaz:
https://doaj.org/article/71a761a59e434988a97e46b788415bad
Autor:
Wenhao Zhang, Jingjing Gao, Li Cheng, Kunliang Bu, Zongxiu Wu, Ying Fei, Yuan Zheng, Li Wang, Fangsen Li, Xuan Luo, Zheng Liu, Yuping Sun, Yi Yin
Publikováno v:
npj Quantum Materials, Vol 7, Iss 1, Pp 1-8 (2022)
Abstract The electronic evolution of doped Mott insulators has been extensively studied for decades in search of exotic physical phases. The proposed Mott insulator 1T-TaS2 provides an intriguing platform to study the electronic evolution via doping.
Externí odkaz:
https://doaj.org/article/d84e44b77e104a06bd06b679152022dd
Autor:
Talha Ijaz, Xin Zhang, Xiaorui Chen, Xueting Xing, Simin Fang, Mengyuan Liu, Huan Lu, Fangsen Li, Jianzhi Gao, Minghu Pan
Publikováno v:
Crystals, Vol 13, Iss 3, p 404 (2023)
Azobenzene derivatives are a unique class of photo-switch molecules with promising potential for nanoscale optical applications. We have studied the self-assembly and photo-induced mechanical switching of azobenzene derivatives on Au(111) at the sing
Externí odkaz:
https://doaj.org/article/876f34530906411896ae88e6e35fbf0a
Autor:
Zengli Huang, Ying Wu, Yanfei Zhao, Lin Shi, Rong Huang, Fangsen Li, Tong Liu, Leilei Xu, Hongwei Gao, Yu Zhou, Qian Sun, Sunan Ding, Ke Xu, Hui Yang
Publikováno v:
AIP Advances, Vol 9, Iss 11, Pp 115106-115106-9 (2019)
The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond i
Externí odkaz:
https://doaj.org/article/fad2cfc759a1432285a6dcedd83154df
Autor:
Rong Huang, Fangsen Li, Tong Liu, Yanfei Zhao, Yafeng Zhu, Yang Shen, Xiaoming Lu, Zengli Huang, Jianping Liu, Liqun Zhang, Shuming Zhang, Zhanping Li, An Dingsun, Hui Yang
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Abstract Contact property is now becoming to be a key factor for achieving high performance and high reliability in GaN-based III-V semiconductor devices. Energetic ion sputter, as an effective interface probe, is widely used to profile the metal/GaN
Externí odkaz:
https://doaj.org/article/02c5678d388b4ceabcb9031e76bd7986
Autor:
Wei Ren, Hao Ru, Kun Peng, Huifang Li, Shuai Lu, Aixi Chen, Pengdong Wang, Xinwei Fang, Zhiyun Li, Rong Huang, Li Wang, Yihua Wang, Fangsen Li
Publikováno v:
Materials, Vol 14, Iss 16, p 4584 (2021)
The phenomenon of oxygen incorporation-induced superconductivity in iron telluride (Fe1+yTe, with antiferromagnetic (AFM) orders) is intriguing and quite different from the case of FeSe. Until now, the microscopic origin of the induced superconductiv
Externí odkaz:
https://doaj.org/article/2ea2d9e0c4084359a2a838fba2217d10
Autor:
Zhengwang Cheng, Zongyuan Zhang, Haigen Sun, Shaojian Li, Hui Yuan, Zhijun Wang, Yan Cao, Zhibin Shao, Qi Bian, Xin Zhang, Fangsen Li, Jiagui Feng, Sunan Ding, Zhiqiang Mao, Minghu Pan
Publikováno v:
APL Materials, Vol 7, Iss 5, Pp 051105-051105-8 (2019)
As a member of ZrHM (H = Si/Ge/Sn; M = O/S/Se/Te) family materials, which were predicted to be the candidates of topological Dirac nodal-line semimetals, ZrGeSe exhibited particular properties, such as magnetic breakdown effect in the transport measu
Externí odkaz:
https://doaj.org/article/074061a0ad2042b6a57125e3dc295432
Autor:
Zhengwang Cheng, Zhilong Hu, Shaojian Li, Xinguo Ma, Zhifeng Liu, Mei Wang, Jing He, Wei Zou, Fangsen Li, Zhiqiang Mao, Minghu Pan
Publikováno v:
New Journal of Physics, Vol 23, Iss 12, p 123026 (2021)
Topological semimetals, in which conduction and valence bands cross each other at either discrete points or along a closed loop with symmetry protected in the momentum space, exhibited great potential in applications of optical devices as well as het
Externí odkaz:
https://doaj.org/article/e2f4c678f18b49c395ae217274aa8212
Autor:
Zhicheng Rao, Quanxin Hu, Shangjie Tian, Qing Qu, Congrun Chen, Shunye Gao, Zhenyu Yuan, Cenyao Tang, Wenhui Fan, Jierui Huang, Yaobo Huang, Li Wang, Lu Zhang, Fangsen Li, Kedong Wang, Huaixin Yang, Hongming Weng, Tian Qian, Jinpeng Xu, Kun Jiang, Hechang Lei, Yu-Jie Sun, Hong Ding
Publikováno v:
Science Bulletin. 68:165-172