Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Fangfei Ming"'
Autor:
Bingrui Li, Weiwei Huang, Chaoqi Dai, Boyuan Wen, Yan Shen, Fei Liu, Ningsheng Xu, Fangfei Ming, Shaozhi Deng
Publikováno v:
Results in Physics, Vol 67, Iss , Pp 108042- (2024)
Fabricating heterojunctions with precisely controlled interfacial structures is crucial for exploring novel low-dimensional physics and for realizing high-performance devices. However, such capabilities are often constrained by contamination from the
Externí odkaz:
https://doaj.org/article/f22a01d0da9f4dc792345f9918ddc5c7
Publikováno v:
Nanomaterials, Vol 14, Iss 17, p 1418 (2024)
Gold-assisted exfoliation can fabricate centimeter- or larger-sized monolayers of van der Waals (vdW) semiconductors, which is desirable for their applications in electronic and optoelectronic devices. However, there is still a lack of control over t
Externí odkaz:
https://doaj.org/article/0691286f96f04a35a6c52eac7ccd33b6
Autor:
Fangfei Ming, Daniel Mulugeta, Weisong Tu, Tyler S. Smith, Paolo Vilmercati, Geunseop Lee, Ying-Tzu Huang, Renee D. Diehl, Paul C. Snijders, Hanno H. Weitering
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
Broken symmetry phases may occur in 2D materials upon doping, yet introducing doping without inducing chemical disorder remains a challenge. Here, the authors use a modulation doping approach that unveils a hidden equilibrium phase involving spontane
Externí odkaz:
https://doaj.org/article/c0eb9e8477244f58927818b988aaa69f
Publikováno v:
New Journal of Physics, Vol 19, Iss 2, p 023048 (2017)
Multiple Co atoms were assembled in the half unit cells (HUCs) of a Si(111)-(7 × 7) surface via vertical atom manipulation at room temperature. Combining scanning tunneling microscopy and first-principles calculations, we have determined the adsorpt
Externí odkaz:
https://doaj.org/article/3818280ca89a4769b27c2d78e2ddc25f
Publikováno v:
ACS Applied Electronic Materials. 3:3338-3345
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd95c6a16d63c6c937e228e12c7e186f
https://doi.org/10.1021/acsaelm.1c00266
https://doi.org/10.1021/acsaelm.1c00266
Autor:
Steven Johnston, Hanno H. Weitering, Xuefeng Wu, Fangfei Ming, Guowei Liu, Tyler S. Smith, Kedong Wang, Fei Ye
Publikováno v:
Physical review letters. 125(11)
Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott insulator; howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66d7524afe2325a872589c087cfe5a76
https://pubmed.ncbi.nlm.nih.gov/32976011
https://pubmed.ncbi.nlm.nih.gov/32976011
Autor:
Tyler S. Smith, Diego Soler-Polo, Hanno H. Weitering, César González, Fernando Flores, Fangfei Ming, José Ortega, Daniel G. Trabada
Publikováno v:
Biblos-e Archivo. Repositorio Institucional de la UAM
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Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario involving unbinding of topological defects at two distinct temperatures. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8356484ae8a039261bc650cc6c712638
Autor:
Ying Tzu Huang, Tyler S. Smith, Renee D. Diehl, Weisong Tu, Jun-Hyung Cho, Fangfei Ming, Xiyou Peng, Paul C. Snijders, Seho Yi, Daniel Mulugeta, Hanno H. Weitering
Publikováno v:
Physical Review B. 97
The hole-doped $\mathrm{Si}(111)(2\ensuremath{\surd}3\ifmmode\times\else\texttimes\fi{}2\ensuremath{\surd}3)R{30}^{\ensuremath{\circ}}$-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90bab4776eb96c3fedceb67664c87923
https://doi.org/10.1103/physrevb.97.195402
https://doi.org/10.1103/physrevb.97.195402
Publikováno v:
Physical Review B. 97
Adsorption of 1/3 monolayer of Sn on a heavily doped $p$-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkably similar to those of the high-${T}_{c}$ copper oxide compounds. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7457dbb0f7a4df5d28af587daf7d66fc
https://doi.org/10.1103/physrevb.97.075403
https://doi.org/10.1103/physrevb.97.075403
Autor:
Paolo Vilmercati, Daniel Mulugeta, Fangfei Ming, Tyler S. Smith, Hanno H. Weitering, Geunseop Lee, Paul C. Snijders, Thomas Maier, Steven Johnston
Publikováno v:
Physical Review Letters. 119
The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a01488190134f754886f66f0617e602
https://doi.org/10.1103/physrevlett.119.266802
https://doi.org/10.1103/physrevlett.119.266802