Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Fang-Hong Gn"'
Autor:
Christian Holfeld, Andre Holfeld, Guoxiang Ning, Tino Hertzsch, Daniel Fischer, Rolf Seltmann, Angeline Ho, Fang Hong Gn, Martin Sczyrba, Paul Ackmann, Karin Kurth
Publikováno v:
SPIE Proceedings.
Backside defects are out of focus during wafer exposure by the mask thickness and cannot be directly imaged on wafer. However, backside defects will induce transmission variation during wafer exposure. When the size of backside defect is larger than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a72a0471ec9c4f74ee2db3d6a11f64
https://doi.org/10.1117/12.958607
https://doi.org/10.1117/12.958607
Autor:
Guoxiang Ning, Frank Richter, Fang Hong Gn, Karin Kurth, Thomas Thamm, Andre Leschok, Paul Ackmann, Marc Staples, Joerg Schenker, Francois Weisbuch
Publikováno v:
SPIE Proceedings.
Reticle critical dimension uniformity (CDU) is an important criterion for the qualification of mask layer processes. Normally, the smaller the three sigma value of reticle CDU is, the better is the reticle CDU performance. For qualification of mask p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad1610f3ab93a8cbde304d85aaacacc
https://doi.org/10.1117/12.964376
https://doi.org/10.1117/12.964376
Autor:
Frank Richter, Fang Hong Gn, Stefan Roling, Christian Buergel, Marc Staples, Anthony Zhou, Thomas Thamm, Guoxiang Ning, Andre Leschok, Paul Ackmann, Chin Teong Lim
Publikováno v:
SPIE Proceedings.
Dummy pattern fill is added to a layout of a reticle for the purpose of raising the pattern-density of specific regions. The pattern-density has also an influence on different process-steps which were performed when manufacturing a reticle (e.g. prox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb0cc6d66224f75536667fcb3ba8cc4
https://doi.org/10.1117/12.964375
https://doi.org/10.1117/12.964375
Autor:
Fang Hong Gn, Guoxiang Ning, Yee Ta Ngow, Sia Kim Tan, Anna Tchikoulaeva, Byoung Il Choi, Christian Holfeld
Publikováno v:
SPIE Proceedings.
Reticle process of record (POR) sometimes needs fine tuning for some reasons such as multiple layer process, better critical dimension uniformity (CDU) or new etch chamber. The sidewall angle and corner rounding will be varied due to the reticle proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf930fdd11c1aeb7963897c7ccea1ad5
https://doi.org/10.1117/12.898801
https://doi.org/10.1117/12.898801
Autor:
Fei Li, Sa Zhao, Hun Chow Lee, Long Phan Nguyen, Qionghan Wang, Victor Lim, Tanya Yang, Fang Hong Gn, A. Inani, Tri Mardiyono
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
With every new manufacturing node also come new modes of failures. Being able to identify these new fail modes and solve them quickly is the key to bring a manufacturing process to mass production readiness. Inline inspection is typically used for st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4609709fb4ec8628881db9b339d33f
https://doi.org/10.1109/asmc.2011.5898214
https://doi.org/10.1109/asmc.2011.5898214
Publikováno v:
MRS Proceedings. 564
Corrosion of the titanium glue layer in a Ti/TiN/Al(Cu) /TiN ARC metal stack is observed during post metal etching polymer stripping in an alkaline chemical stripper. This novel corrosion only occurs when the underlying tungsten via plug is exposed,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc92681328f511e588aa3c4cdb7df23
https://doi.org/10.1557/proc-564-451
https://doi.org/10.1557/proc-564-451
Publikováno v:
SPIE Proceedings.
Decreasing contact geometry imposes stringent requirements on barrier metals in providing good barrier against Al-Si interdiffusion. The challenge for the barrier metal technologies is to develop a process to give conformal and thermally stable barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d0bb52eb7846f7dfcf1b5f4269874a
https://doi.org/10.1117/12.250878
https://doi.org/10.1117/12.250878
Publikováno v:
SPIE Proceedings.
TiW has been used extensively as the barrier metal in submicron metallization. However, TiW has also drawn much attention as the source of defect generation contributing to functional yield loss. Usually, the defects are in the form of flakes which c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8958e4f835de206dd733f77c779e4439
https://doi.org/10.1117/12.221458
https://doi.org/10.1117/12.221458
Publikováno v:
SPIE Proceedings.
As part of our continued studies into improving the performance of multilevel interconnect schemes, we have investigated the film properties and etchability of the AlSiCu/TiN and AlSiCu/TiW film stacks. In this study, two different types of TiN film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5a914e5bf7d17c1414087e0a6f5967
https://doi.org/10.1117/12.221141
https://doi.org/10.1117/12.221141
Publikováno v:
SPIE Proceedings.
To achieve good step coverage for submicron contacts/vias, many approaches have been taken in recent years in VLSI production. While CVD tungsten plug is widely implemented in the U.S. for submicron manufacturing, planarized aluminum plug (i.e., high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389a0f2ee6ece6834a5345274688af7d
https://doi.org/10.1117/12.186072
https://doi.org/10.1117/12.186072