Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Fang Cheng, Chou"'
Autor:
Shigeto Hirai, Shunsuke Yagi, Wei‐Tin Chen, Fang‐Cheng Chou, Noriyasu Okazaki, Tomoya Ohno, Hisao Suzuki, Takeshi Matsuda
Publikováno v:
Advanced Science, Vol 4, Iss 10, Pp n/a-n/a (2017)
Abstract The oxygen evolution reaction (OER) plays a key role in emerging energy conversion technologies such as rechargeable metal‐air batteries, and direct solar water splitting. Herein, a remarkably low overpotential of ≈150 mV at 10 mA cm−2
Externí odkaz:
https://doaj.org/article/171be55de95a494f9198df59ebf36b02
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075314-075314-6 (2017)
Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions
Externí odkaz:
https://doaj.org/article/095757424fef454b824bc06e1fd4796d
Autor:
Rajeshkumar Mohanraman, Raman Sankar, Fang-Cheng Chou, Chih-Hao Lee, Yoshiyuki Iizuka, I. Panneer Muthuselvam, Yang-Yuan Chen
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 096114-096114-7 (2014)
We report a maximal figure of merit (ZT) value of 1.1 at 600 K was obtained for the sample of which x = 0.03, representing an enhancement greater than 20% compared with a pristine AgSbTe2 sample. This favorable thermoelectric performance originated f
Externí odkaz:
https://doaj.org/article/bcf5bed5fd564687bd18bc7e48da8a32
Autor:
Gaurav, Pande, Jyun-Yan, Siao, Wei-Liang, Chen, Chien-Ju, Lee, Raman, Sankar, Yu-Ming, Chang, Chii-Dong, Chen, Wen-Hao, Chang, Fang-Cheng, Chou, Minn-Tsong, Lin
Publikováno v:
ACS applied materialsinterfaces. 12(16)
To explore the potential of field-effect transistors (FETs) based on monolayers (MLs) of the two-dimensional semiconducting channel (SC) for spintronics, the two most important issues are to ensure the formation of variable low-resistive tunnel ferro
Publikováno v:
Dalton Transactions. 47:16509-16515
Based on the atomic electronic configuration and Ti-Se coordination, a valence bond model for the layered transition metal dichalcogenide (TMDC) 1T-TiSe2 is proposed. 1T-TiSe2 is viewed as being composed of edge-sharing TiSe4-plaquettes as TiSe2-ribb
Autor:
Chih-Yi Cheng, Wei-Liang Pai, Yi-Hsun Chen, Naomi Tabudlong Paylaga, Pin-Yun Wu, Chun-Wei Chen, Chi-Te Liang, Fang-Cheng Chou, Sankar, Raman, Fuhrer, Michael S., Shao-Yu Chen, Wei-Hua Wang
Publikováno v:
Nano Letters; 3/23/2022, Vol. 22 Issue 6, p2270-2276, 7p
Autor:
Christy Roshini, Paul Inbaraj, Vijay Kumar, Gudelli, Roshan Jesus, Mathew, Rajesh Kumar, Ulaganathan, Raman, Sankar, Hsia Yu, Lin, Hung-I, Lin, Yu-Ming, Liao, Hao-Yu, Cheng, Kung-Hsuan, Lin, Fang Cheng, Chou, Yit-Tsong, Chen, Chih-Hao, Lee, Guang-Yu, Guo, Yang-Fang, Chen
Publikováno v:
ACS applied materialsinterfaces. 11(27)
Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In
Autor:
Christy Roshini, Paul Inbaraj, Roshan Jesus, Mathew, Golam, Haider, Tzu-Pei, Chen, Rajesh Kumar, Ulaganathan, Raman, Sankar, Krishna Prasad, Bera, Yu-Ming, Liao, Monika, Kataria, Hung-I, Lin, Fang Cheng, Chou, Yit-Tsong, Chen, Chih-Hao, Lee, Yang-Fang, Chen
Publikováno v:
Nanoscale. 10(39)
Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechani
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(17)
Understanding of magnetocrystalline anisotropy in CaFe
Publikováno v:
Microscopy and Microanalysis. 24:2266-2267