Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Fang‐Churng Tseng"'
Autor:
Fang-Churng Tseng
Publikováno v:
2009 International Symposium on VLSI Design, Automation and Test.
The semiconductor industry has been in a path of steady growth tolerating waves of economical ups and downturns. We are currently facing a severe one that very few of us have encountered in our lifetime. Nevertheless, it is not a question whether the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d815803b29c45cc48165b6c46c6af13
https://doi.org/10.1109/vdat.2009.5158079
https://doi.org/10.1109/vdat.2009.5158079
Publikováno v:
Solid-State Electronics. 28:1263-1269
This paper presents an accurate and analytic threshold-voltage model for n -channel enhancement MOSFETs with single-channel boron implantation. In the developed model, the step-profile approximation is used to simulate the channel-implanted profile a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a8909531df1ca423ed8f577377cca97
https://doi.org/10.1016/0038-1101(85)90052-8
https://doi.org/10.1016/0038-1101(85)90052-8
Publikováno v:
Solid-State Electronics. 27:651-658
Based on the two-dimensional Poisson equation, the surface potential distribution along the surface channel of a MOSFET has been analytically derived by assuming negligible source and drain junction depths and its minimum potential is then used to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::864411bf75d79150e957972baa1c32bb
https://doi.org/10.1016/0038-1101(84)90135-7
https://doi.org/10.1016/0038-1101(84)90135-7
Publikováno v:
Journal of The Electrochemical Society. 131:875-877
A significant influence of thermal nitridation on the electrical characteristics of nitroxide films was found in this study. Nitridation at temperatures lower than 1000~ results in a great negative shift of flatband voltage VFB. However, the value of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcec1623ae34ee60d687af2b898b5f06
https://doi.org/10.1149/1.2115718
https://doi.org/10.1149/1.2115718
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