Zobrazeno 1 - 10
of 3 239
pro vyhledávání: '"Fang, N"'
Autor:
Fong, C. F., Yamashita, D., Fang, N., Fujii, S., Chang, Y. -R., Taniguchi, T., Watanabe, K., Kato, Y. K.
Two-dimensional (2D) van der Waals layered materials with intriguing properties are increasingly being adopted in hybrid photonics. The 2D materials are often integrated with photonic structures including cavities to enhance light-matter coupling, pr
Externí odkaz:
http://arxiv.org/abs/2308.10566
Autor:
Fang, N., Chang, Y. R., Fujii, S., Yamashita, D., Maruyama, M., Gao, Y., Fong, C. F., Kozawa, D., Otsuka, K., Nagashio, K., Okada, S., Kato, Y. K.
Publikováno v:
Nat. Commun. 15, 2871 (2024)
The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical prope
Externí odkaz:
http://arxiv.org/abs/2307.15399
Autor:
Fang, N., Yamashita, D., Fujii, S., Maruyama, M., Gao, Y., Chang, Y. R., Fong, C. F., Otsuka, K., Nagashio, K., Okada, S., Kato, Y. K.
Publikováno v:
Nat. Commun. 14, 8152 (2023)
Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing s
Externí odkaz:
http://arxiv.org/abs/2307.07124
Autor:
Fang, N., Yamashita, D., Fujii, S., Otsuka, K., Taniguchi, T., Watanabe, K., Nagashio, K., Kato, Y. K.
Publikováno v:
Adv. Opt. Mater. 10, 2200538 (2022)
The unique optical properties of two-dimensional layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature, these materials are ideal for integrating with nanoscale photonic stru
Externí odkaz:
http://arxiv.org/abs/2201.06684
Publikováno v:
Nat. Commun. 12, 3138 (2021)
When continued device scaling reaches the ultimate limit imposed by atoms, technology based on atomically precise structures is expected to emerge. Device fabrication will then require building blocks with identified atomic arrangements and assembly
Externí odkaz:
http://arxiv.org/abs/2012.01741
Publikováno v:
Adv. Func. Mater. 2019, 29, 1904465
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely degrades the
Externí odkaz:
http://arxiv.org/abs/2006.10440
Publikováno v:
ACS Photonics 7, 1773 (2020)
Hexagonal boron nitride is widely used as a substrate for two-dimensional materials in both electronic and photonic devices. Here, we demonstrate that two-dimensional hexagonal boron nitride is also an ideal substrate for one-dimensional single-walle
Externí odkaz:
http://arxiv.org/abs/2003.03054
Publikováno v:
International Journal of Nanomedicine, Vol Volume 17, Pp 5229-5246 (2022)
Liu Hu1,2 *, Jie Xu1 *, Wenli Zhang,1,2 Junrui Wang,1,2 Ni Fang,1,2 Ying Luo,1,2 Lian Xu,1,2 Jia Liu,1 Yu Zhang,1 Haitao Ran,3 Dajing Guo,1 Jun Zhou1 1Department of Radiology, The Second Affiliated Hospital of Chongqing Medical University, Ch
Externí odkaz:
https://doaj.org/article/e899e321c9d24a3c99678054c592f50a
Publikováno v:
In Materials Characterization July 2022 189
Autor:
Fang N, Liu J, Hou J, Zhong Y, Luo Y, Hu L, Zhang W, Wang J, Xu J, Zhou J, Zhang Y, Ran H, Guo D
Publikováno v:
International Journal of Nanomedicine, Vol Volume 17, Pp 2019-2039 (2022)
Ni Fang,1,2,* Jia Liu,1,* Jingxin Hou,1,2 Yixin Zhong,1,2 Ying Luo,1,2 Liu Hu,1,2 Wenli Zhang,1,2 Junrui Wang,1,2 Jie Xu,1 Jun Zhou,1 Yu Zhang,1 Haitao Ran,2 Dajing Guo1 1Department of Radiology, Second Affiliated Hospital of Chongqing Medica
Externí odkaz:
https://doaj.org/article/d2a64f6021d64e11abb4c0e53a9129c0