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pro vyhledávání: '"Fan-Yu Liu"'
Publikováno v:
Life, Vol 12, Iss 12, p 2133 (2022)
Background: Understanding balance ability and assessing the risk of possible falls are very important for elderly rehabilitation. The Mini-Balanced Evaluation System Test (Mini-BESTest) is an important survey for older adults to evaluate subject bala
Externí odkaz:
https://doaj.org/article/4abc139e361c47038c94dc90fc5226ed
Autor:
Fan-Yu Liu, 劉凡于
103
Polylactide (PLA) is currently used in a number of biomedical tools, including sutures, stents, scaffolds, and drug delivery devices. PLA is a widely used polymer for biomedical devices which has received much attention for its biodegradabil
Polylactide (PLA) is currently used in a number of biomedical tools, including sutures, stents, scaffolds, and drug delivery devices. PLA is a widely used polymer for biomedical devices which has received much attention for its biodegradabil
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/79703121751947708816
Autor:
Fan Yu Liu, Irina Ionica, Mukta Singh Parihar, Carlos Navarro, Sylvain Barraud, Sorin Cristoloveanu, Maryline Bawedin, Abhinav Kranti
Publikováno v:
ESSDERC
2015 ESSDERC Proceedings
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.282-285, ⟨10.1109/ESSDERC.2015.7324769⟩
2015 ESSDERC Proceedings
2015 ESSDERC-45th European Solid-State Device Research Conference
2015 ESSDERC-45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.282-285, ⟨10.1109/ESSDERC.2015.7324769⟩
session C4L-E: Characterization of Advanced Devices; International audience; The work addresses effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced FDSOI techno
Publikováno v:
Chinese Physics B. 25:047305
In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefor