Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Fan-Wei Chang"'
Autor:
Fan-Wei Chang, Yu-Hung Chen, Chen Hong-Syu, Kang-Hung Ma, Yu-Hsin Lin, Tseng Wei-Hao, Hong-Jye Hong, Tsu-Wei Chen, Hung-Yang Chuang, Guan-Yu Lin, Chia-Yang Lu, Chia-Yu Chen, Hung-Che Ting, Chen Teng-Ke, Shao-Wei Fang, Jen-Yu Lee, Tsung-Hsiang Shih
Publikováno v:
Solid-State Electronics. 103:173-177
In this work, the effects of nitrous oxide plasma treatment on the negative bias temperature stress of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) were reported. ITZO TFTs were more suitable for the
Autor:
Yi-Ju Hsiao, Yu-Hung Chen, Hsueh-Hsing Lu, Yu-Hsin Lin, Fan-Wei Chang, Cheng-Chung Nen, Chih-An Huang, Hong Shen Lin, Tsu-Wei Chen, Chun-Ming Chao, Lee-Hsun Chang, Chia-Yang Lu, Ya-Pei Kuo, Yu-Shian Lin
Publikováno v:
SID Symposium Digest of Technical Papers. 46:869-871
By combining stable array processes and cutting-edge OLED processes, we successfully fabricated a high-performance 65-inch ultra HD TV with excellent visual quality. Our discussion will briefly explain the architecture of the OLED TV and its merits.
Autor:
Bor-Chuan Chuang, Chin-Chih Yu, Chia-Hao Tsai, Shuo-Wei Liang, Fan-Wei Chang, Shin-Chuan Chiang, Chien-Yie Tsay
Publikováno v:
SID Symposium Digest of Technical Papers. 39:1188
In this study, Zn0.97Zr0.03O thin films were prepared by sol-gel method and TFTs with Zn0.97Zr0.03O active channel layer were fabricated. Field effect mobility and threshold voltage of the Zn0.97Zr0.03O-TFT are 0.0042 cm2/V-sec and 24.5 V, respective