Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Fan-Lei Wu"'
Autor:
Tsung-Shine Ko, Der-Yuh Lin, You-Chi He, Chen-Chia Kao, Bo-Yuan Hu, Ray-Hua Horng, Fan-Lei Wu, Chih-Hung Wu, Yu-Li Tsai
Publikováno v:
International Journal of Photoenergy, Vol 2015 (2015)
The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate th
Externí odkaz:
https://doaj.org/article/1abdb4afdced422b91020bb92781e608
Autor:
Fan-Lei Wu, 吳凡磊
104
In this dissertation, two important techniques were respectively demonstrated for the development of optoelectronic devices. In the first part, the characteristics of different etching solutions applied to the epitaxial lift-off process (ELO
In this dissertation, two important techniques were respectively demonstrated for the development of optoelectronic devices. In the first part, the characteristics of different etching solutions applied to the epitaxial lift-off process (ELO
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40568191288014695026
Autor:
Fan-Lei Wu, 吳凡磊
97
We present the optical and electrical characterization of undoped rhenium disulphide（ReS2）and gold-doped rhenium disulphide（ReS2：Au）which were grown by the chemical-vapor transport method（CVT）with I2 as the transport agent. We p
We present the optical and electrical characterization of undoped rhenium disulphide（ReS2）and gold-doped rhenium disulphide（ReS2：Au）which were grown by the chemical-vapor transport method（CVT）with I2 as the transport agent. We p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53571943583545283206
Publikováno v:
Thin Solid Films. 612:36-40
InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f94e5fe013d158208ccd67636b4b1895
https://doi.org/10.1016/j.tsf.2016.05.045
https://doi.org/10.1016/j.tsf.2016.05.045
Publikováno v:
Solar Energy Materials and Solar Cells. 122:233-240
In this study, the epilayer structure of a GaAs solar cell was quickly separated from the GaAs substrate by performing the epitaxial lift-off (ELO) process in hydrofluoric acid (HF) solutions mixed with hydrophilic substances, and the epilayer struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3896260f1ab9583613a8697eb28c8c0e
https://doi.org/10.1016/j.solmat.2013.12.013
https://doi.org/10.1016/j.solmat.2013.12.013
Publikováno v:
ECS Transactions. 50:361-365
In this study, GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with low surface tension fluid as mixture etchant solution to etch sacrificial layer. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7edac9d5d606170bdf010844f0d4a3ad
https://doi.org/10.1149/05006.0361ecst
https://doi.org/10.1149/05006.0361ecst
Effects of buffer layers and front electrode angles on the performance of In0.16Ga0.84As solar cells
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Three buffer layers, that included 2-step, step-graded, and linear-graded layers, were designed to improve the performance of In 0.16 Ga 0.84 As solar cell. The In 016 Ga 084 As solar cells fabricated on these three buffer layers were denoted as 2S-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e8e5bbad2cdbfa1c0143cd66a268e9
https://doi.org/10.1109/pvsc.2016.7750057
https://doi.org/10.1109/pvsc.2016.7750057
Publikováno v:
IEEE Transactions on Electron Devices. 59:666-672
This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to defin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59251739c58ce481775176f9f6b1035
https://doi.org/10.1109/ted.2011.2177986
https://doi.org/10.1109/ted.2011.2177986
Publikováno v:
Vacuum. 86:843-847
This article reports the quality of In x Ga 1− x As (0 x x Ga 1− x As epilayers is determined by x-ray reciprocal space mapping (RSM). From the RSM results, the crystalline quality of In x Ga 1− x As epilayers grown with small indium compositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c539b4bbb423cb945e75818c9c16d95
https://doi.org/10.1016/j.vacuum.2011.02.014
https://doi.org/10.1016/j.vacuum.2011.02.014
Publikováno v:
IEEE Transactions on Electron Devices. 58:3898-3904
This paper presents the thermal effect on the performance of a GaAs thin-film solar cell with a 50-200- μm-thick copper (Cu) substrate. The GaAs thin-film solar cell is fabricated by transferring a GaAs solar cell on a Cu substrate with a AuGe/Au mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49007a94b43d7c5c7fb70a042cb5fe75
https://doi.org/10.1109/ted.2011.2165721
https://doi.org/10.1109/ted.2011.2165721