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of 359
pro vyhledávání: '"Fan, W.J."'
In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. Our experiments revealed tha
Externí odkaz:
http://hdl.handle.net/1721.1/4034
Publikováno v:
In International Journal of Hydrogen Energy 23 June 2021 46(43):22646-22658
Publikováno v:
In Journal of Alloys and Compounds 15 April 2020 820
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In Energy 15 December 2019 189
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In Energy 15 July 2019 179:603-617
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In Energy 15 December 2018 165 Part A:979-996
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In Applied Energy 1 September 2018 225:940-954
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In Energy 15 December 2015 93 Part 2:1535-1547
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In Applied Energy 1 October 2014 130:314-325
Publikováno v:
In Superlattices and Microstructures October 2012 52(4):618-631