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Germanium crystals on silicon show their light

Autor: Pezzoli, F., Isa, F., Isella, G., Falub, C. V., Kreiliger, T., Salvalaglio, M., Bergamaschini, R., Grilli, E., Guzzi, M., von Kaenel, H., Miglio, Leo

Publikováno v: Phys. Rev. Applied 1, 044005 (2014)

Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si funct

Externí odkaz: http://arxiv.org/abs/1306.5270

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Intra-valence-band mixing in strain-compensated SiGe quantum wells

Autor: Tsujino, S., Borak, A., Falub, C., Fromherz, T., Diehl, L., Sigg, H., Gruetzmacher, D.

We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the inte

Externí odkaz: http://arxiv.org/abs/cond-mat/0505338

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The electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ thin films and its $T_c$ dependence as studied by angle-resolved photoemission

Autor: Shi, M., Falub, M. C., Willmott, P. R., Krempasky, J., Herger, R., Patthey, L., Hricovini, K., Falub, C., Schneider, M.

Publikováno v: J. Phys.: Condens. Matter 20 (2008) 222001

We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La$_{1-x}$Sr$_{x}$MnO$_{3}$. We show that the transition temperature ($T_c$) from the paramagnetic insulating to ferromagnetic m

Externí odkaz: http://arxiv.org/abs/cond-mat/0503515

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Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

Autor: Gennser, U., Scheinert, M., Diehl, L., Tsujino, S., Borak, A., Falub, C. V., Grützmacher, D., Weber, A., Maude, D. K., Campidelli, Y., Kermarrec, O., Bensahel, D.

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetot

Externí odkaz: http://arxiv.org/abs/cond-mat/0501212

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Akademický článek

Resonator fabrication for cavity enhanced, tunable Si/Ge quantum cascade detectors

Autor: Grydlik, M., Rauter, P., Fromherz, T., Bauer, G., Falub, C., Gruetzmacher, D., Isella, G.

Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures 2006 32(1):313-315

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Akademický článek

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale.

Autor: Taboada, A. G., Meduňa, M., Salvalaglio, M., Isa, F., Kreiliger, T., Falub, C. V., Meier, E. Barthazy, Müller, E., Miglio, L., Isella, G., von Känel, H.

Publikováno v: Journal of Applied Physics; 2/7/2016, Vol. 119 Issue 5, p1-12, 12p, 5 Color Photographs, 4 Black and White Photographs, 1 Chart, 1 Graph

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Akademický článek

Intersubband absorption of strain-compensated Si1-xGex valence-band quantum wells with 0.7<=x<=0.85.

Autor: Fromherz, T., Medunňa, M., Bauer, G., Borak, A., Falub, C. V., Tsujino, S., Sigg, H., Grützmacher, D.

Publikováno v: Journal of Applied Physics; 8/15/2005, Vol. 98 Issue 4, p044501, 7p, 2 Charts, 6 Graphs

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Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates

Autor: Isa, F, Falub, C, Müller, E, Taboada, A, Groiss, H, Kreiliger, T, Isella, G, Niedermann, P, Schäffler, F, von Kaenel, H, PEZZOLI, FABIO, MARZEGALLI, ANNA, BERGAMASCHINI, ROBERTO, SALVALAGLIO, MARCO, MONTALENTI, FRANCESCO CIMBRO MATTIA, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, MIGLIO, LEONIDA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::119f4687c9fb8e8f8fd846542eb6257e
http://hdl.handle.net/10281/51078

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Photoluminescence of bulk-quality 3D Ge crystal arrays on Si (001)

Autor: Isa, F, Isella, G, Kreiliger, T, Falub, C, Känel, H, PEZZOLI, FABIO, BERGAMASCHINI, ROBERTO, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, MIGLIO, LEONIDA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::07610d6dd1c838ff2d350e034363abbd
http://hdl.handle.net/10281/51081

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Versagensmechanismus von DLC Beschichtungen bei Hüftköpfen und retrospektive Vorhersage des Implantatversagens im Vergleich zu Aluminiumoxidkeramik

Autor: Täger, G., Podleska, L. E., Falub, C., Thorwald, G., Hauert, R.

Publikováno v: Deutscher Kongress für Orthopädie und Unfallchirurgie; 74. Jahrestagung der Deutschen Gesellschaft für Unfallchirurgie, 96. Tagung der Deutschen Gesellschaft für Orthopädie und Orthopädische Chirurgie, 51. Tagung des Berufsverbandes der Fachärzte für Orthopädie; 20101026-20101029; Berlin; DOCEF16-1588 /20101021/

Fragestellung: Wegen der Bedeutung von Verschleißpartikeln für die Entwicklung von Osteolysen mit konsekutivem Implantatversagen werden weiterhin Alternativen zu den bislang verwendeten Oberflächen beziehungsweise Gleitpaarungen untersucht. Kohlen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86d0a2c3c885c4ab65dc1438bf1f2c95
http://www.egms.de/en/meetings/dkou2010/10dkou047.shtml

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