Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Falk Graetsch"'
Autor:
Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann
Publikováno v:
ECS Transactions. 33:3-14
Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct
Autor:
Jörg-Oliver Weidner, Lutz Herrmann, T. Mantei, Falk Graetsch, Rolf Geilenkeuser, Karsten Wieczorek
Publikováno v:
Materials Science and Engineering: B. 118:50-54
Appropriate balancing of the polysilicon dopant concentration and the physical gate dielectric thickness is required so as to accomplish a minimized capacitance equivalent thickness (CET) at low gate leakage (JG) and high reliability. Here, we invest
Autor:
Martin Trentzsch, Bernhard Trui, Rolf Stephan, Walter Hansch, Lutz Herrmann, Torben Kelwing, Andreas Naumann, Falk Graetsch, S. Mutas, Rick Carter, Peter Kücher
Publikováno v:
IEEE Electron Device Letters. 31:1149-1151
For the first time, HfZrO4 dielectrics deposited with metal-organic chemical vapor deposition (MOCVD) as well as atomic layer deposition (ALD) have been investigated as high-k gate dielectric for 32-nm high-performance logic SOI complementary metal-o
Publikováno v:
2009 IEEE International Integrated Reliability Workshop Final Report.
This work shows how fast wafer-level reliability (fWLR) inline tests allow to quickly screen the intrinsic reliability of High-k / Metal Gate (HK/MG) process splits in an effective manner. Various Hf based gate stack compositions such as pure HfO 2 ,
Autor:
V. Samohvalov, Falk Graetsch, Martin Trentzsch, B. Bayha, T. Schink, Rolf Geilenkeuser, Karsten Wieczorek, T. Paetzold
Publikováno v:
2008 IEEE International Integrated Reliability Workshop Final Report.
In the presented work we demonstrate an efficient way to improve the balance between performance and reliability in the case that microprocessor speed is limited by a pMOS dominated speed path. It is shown that with differential targeted, thicker pMO
Autor:
R. Kirsch, Gunter Grasshoff, Peter Huebler, Falk Graetsch, Thomas Feudel, Thomas Werner, Stephan Kruegel, Holger Schuehrer, Thomas Heller, Hartmut Ruelke, Karsten Wieczorek, Rolf Stephan, Michael Raab, Kai Frohberg, E. Langer, A. Pawlowitsch, Carsten Hartig, D. Greenlaw, Andy Wei, Gert Burbach, K. Hempel, Manfred Horstmann, Frank Feustel
Publikováno v:
IEEE International Electron Devices Meeting 2003.
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor d
Autor:
Torben Kelwing, Andreas Naumann, Martin Trentzsch, Sergej Mutas, Bernhard Trui, Lutz Herrmann, Falk Graetsch, Christoph Klein, Lutz Wilde, Susanne Ohsiek, Martin Weisheit, Anita Peeva, Inka Richter, Hartmut Prinz, Alexander Wuerfel, Rick Carter, Rolf Stephan, Peter Kücher, Walter Hansch
Publikováno v:
ECS Meeting Abstracts. :1484-1484
not Available.